Semiconductor device and semiconductor device manufacturing method

Abstract

Provided is a semiconductor device capable of being productively manufactured, in which an implant substrate and a semiconductor element mounted on a semiconductor mounting substrate are joined and electrically connected through implant pins. In the semiconductor device, an implant pin (20) is joined to a semiconductor element (8) on a semiconductor mounting substrate and / or to a circuit pattern (5) via a cylindrical terminal (10) into which the other end of the implant pin (20) is pressed. In addition, the depth (L2) of the implant pin (20) pressed into the cylindrical terminal (10) is adjustable. In this way, the total length of the cylindrical terminal (10) and the implant pin (20) being pressed into the cylindrical terminal (10) is fitted to the distance between the semiconductor element (8) on the semiconductor mounting substrate and an implant substrate (30) and / or to the distance between the circuit pattern (5) and the implant substrate (30).

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device mounted with a power semiconductor element and the like and a manufacturing method thereof. Background technique [0002] A semiconductor device in which semiconductor elements are modularized, for example, adopts Figure 9 The package structure shown. [0003] Figure 9 The bottom of a resin case 52 of the illustrated semiconductor device is provided with a cooling plate 51 . An insulating wiring board 56 is provided on the cooling plate 51 . The insulating wiring board 56 is constituted by bonding metal layers 54 and 55 to both surfaces of the insulating substrate 53 , and the metal layer 55 of the insulating wiring board 56 and the cooling plate 51 are joined via a solder layer 57 a. A semiconductor element 58 is provided on the insulating wiring substrate 56 . Furthermore, the metal layer 54 of the insulatin...

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Problems solved by technology

In addition, since heat is generated when the bonding wire 60 is energized, it is almost impossible to expect a heat dissipation effect of dissipating heat from the upper surface of the semiconductor element 58.

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