A Method of Generating Offline Auxiliary Program Scheme
An auxiliary program and scheme technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve the problems of not being able to improve the consistency of critical dimensions in a timely manner, and for a long time, so as to improve the consistency of critical dimensions and reduce the use of Time, fast generated effects
Active Publication Date: 2017-05-10
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
That is, it often takes a long time to generate an auxiliary program plan; this leads to the inability to improve the consistency of key dimensions in a timely manner
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0035] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0036] In order to thoroughly understand the present invention, detailed steps will be presented in the following description in order to explain the manufacturing method of the semiconductor device proposed by the present invention. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.
[0037] It should be understo...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a method of generating an offline sub recipe and relates to the field of semiconductor technology. The method comprises steps: S101, a critical dimension distribution curve detected after being etched is built to serve as a reference; S102, critical dimension uniformity data of a mask plate are acquired; and S103, the offline sub recipe is generated according to the critical dimension distribution curve detected after being etched as a reference and the critical dimension uniformity data of the mask plate. According to the method, the offline sub recipe is generated on the basis of the critical dimension distribution curve detected after being etched as a reference and the critical dimension uniformity data of the mask plate, the use time of a measurement tool and the working time of an engineer are reduced, quick offline sub recipe generation can be realized, and critical dimension uniformity of an integrated circuit can be timely improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for generating an offline auxiliary program solution. Background technique [0002] In the manufacturing process of semiconductor devices, with the development of semiconductor manufacturing technology, the critical dimension (Critical Dimension, CD) of semiconductor devices is getting smaller and smaller. Correspondingly, critical dimension uniformity (Critical Dimension Uniformity, CDU) becomes more and more important, especially when the process node of semiconductor manufacturing technology develops to 40nm and below. [0003] In the existing technology, the cross-chip linewidth variation (Across Chip Linewidth Variation, ACLV) and cross-wafer critical dimension variation (Across Wafer CDVariation, AWLV) can be improved by using a sub-recipe. That is, to improve the critical dimension consistency (uniformity) of integrated circuits. Among them, the sub-recip...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/02G06F17/50
CPCG06F30/392H01L22/30
Inventor 舒强郝静安
Owner SEMICON MFG INT (SHANGHAI) CORP