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Semiconductor integrated circuit manufacturing method

A technology of integrated circuits and semiconductors, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, circuits, etc., and can solve problems such as inability to meet

Active Publication Date: 2017-03-01
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the existing methods of manufacturing IC devices are generally able to meet the intended purpose of use, they still cannot meet the requirements of all aspects.
For example, challenges remain in developing a more robust metal line for interconnect structures

Method used

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  • Semiconductor integrated circuit manufacturing method
  • Semiconductor integrated circuit manufacturing method
  • Semiconductor integrated circuit manufacturing method

Examples

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Embodiment Construction

[0027] The following disclosure provides a number of different embodiments or examples for implementing different features of the present invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. In addition, in the following description, performing the first process before the second process may include an embodiment in which the second process is performed immediately after the first process, and may also include other processes that may be performed between the first process and the second process the embodiment. Various features may be drawn in different scales for simplicity and clarity. In addition, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are in direct contact, and may also include that other components may be...

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Abstract

The present invention disclosed a method of manufacturing semiconductor integrated circuit (IC).This method includes: providing substrates.Form a pattern bonding layer on the substrate.The metal layer is deposited on the pattern bonding layer.The high temperature thermal process is used to gather metal layers to form a self -forming metal component (SFMF), and sedimentary aggressive layers between SFMF.

Description

technical field [0001] The present invention relates to the field of semiconductors, and more specifically, to a method for manufacturing a semiconductor integrated circuit. Background technique [0002] The semiconductor integrated circuit (IC) industry is developing rapidly. Due to technological advancements in IC design and materials, ICs are constantly being updated, and new generations of ICs have smaller but more complex circuits than previous generation ICs. During the development of ICs, the functional density (i.e., the number of interconnected devices per chip area) has generally increased, but the geometry size (i.e., the smallest component (or line) that can be obtained by the manufacturing process) has been reduced. . [0003] An advantage of this scaling down process is generally increased production efficiency and reduced associated costs. However, this scaling down process also increases the complexity of IC processing and manufacturing. To achieve these ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/532
CPCH01L23/53233H01L23/53238H01L23/53252H01L2924/0002H01L2924/00H01L21/76885H01L21/76852H01L21/768
Inventor 刘文俊陈建安李亚莲苏鸿文蔡明兴章勋明
Owner TAIWAN SEMICON MFG CO LTD