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Semiconductor device structure and methods for forming a CMOS integrated circuit structure

An integrated circuit and device structure technology, applied in the field of semiconductor device structure, can solve the problems of reducing on-current and switching speed, etc.

Inactive Publication Date: 2014-07-23
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In general, conventional CMOS manufacturing processes cause the substrate surface to be recessed around the gate electrode of the PMOS transistor thereby reducing the conduction current and switching speed of conventional PMOS transistors and conventional CMOS structures and devices

Method used

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  • Semiconductor device structure and methods for forming a CMOS integrated circuit structure
  • Semiconductor device structure and methods for forming a CMOS integrated circuit structure
  • Semiconductor device structure and methods for forming a CMOS integrated circuit structure

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Embodiment Construction

[0081] The following detailed description is illustrative in nature and is not intended to limit the disclosure or application and merely illustrates several aspects of the disclosure. Furthermore, there is no intention to be bound by any expressed or implied theory in the technical field, background art, brief summary of the invention or the detailed description.

[0082] Several specific embodiments are described in sufficient detail below to enable those skilled in the art to make and use the present invention. It is to be understood that other embodiments are evident based on the present disclosure, and that system, structural, methodological or mechanical changes may be made without departing from the scope of the present invention. In the following description, numerous specific details are given in order to provide the reader with a thorough understanding of the invention. It is evident, however, that the various aspects and embodiments of the disclosure illustrated an...

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Abstract

Methods for forming CMOS integrated circuit structures are provided, the methods comprising performing a first implantation process for performing at least one of a halo implantation and a source and drain extension implantation into a region of a semiconductor substrate and then forming a stressor region in another region of the semiconductor substrate. Furthermore, a semiconductor device structure is provided, the structure comprising a stressor region embedded into a semiconductor substrate adjacent to a gate structure, the embedded stressor region having a surface differing along a normal direction of the surface from an interface by less than about 8 nm, wherein the interface is formed between the gate structure and the substrate.

Description

technical field [0001] The present invention relates generally to a method of forming a CMOS integrated circuit structure and to a semiconductor device structure, and more particularly to a method of forming a CMOS integrated circuit structure having a strained PMOS device and to several types of Strained semiconductor device structures. Background technique [0002] Most of today's integrated circuits (ICs) are implemented with a plurality of interconnected field effect transistors (FETs), also called metal oxide semiconductor field effect transistors (MOSFETs) or simply MOS transistors. Traditionally, today's integrated circuits are implemented with millions of MOS transistors to be formed on a chip with a given surface area. A common technology used to construct integrated circuits today is provided by Complementary Metal Oxide Semiconductor (CMOS) technology. Current IC designs utilizing CMOS technology use complementary and symmetrical pairs of P-type MOSFETs (also kn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/092H01L29/10H01L29/423H01L21/8238H10B10/00
CPCH01L21/823807H01L21/823814H01L21/823878H01L29/7848H01L29/66636H01L29/6659H01L21/18H01L21/8228
Inventor S·弗莱克豪斯基R·里克特R·博施克
Owner GLOBALFOUNDRIES INC