Asymmetric phase shifting and equivalent apodization sampling optical grating based on reconstruction-equivalent chirp and DFB laser thereof

A technology of DFB laser and asymmetric phase shift, which is applied in the field of optoelectronics, can solve the problems such as difficult process realization, and achieve the effect of improving single-mode stability, high single-mode characteristic and high power

Inactive Publication Date: 2014-08-06
NANJING UNIV
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Problems solved by technology

[0022] The problem to be solved by the present invention is: the traditional phase shift off-center process is complex and difficult to realize, and the hole burning effect is aggravated after the phase shift deviates, resulting in a greatly reduced single-mode yield

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  • Asymmetric phase shifting and equivalent apodization sampling optical grating based on reconstruction-equivalent chirp and DFB laser thereof
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  • Asymmetric phase shifting and equivalent apodization sampling optical grating based on reconstruction-equivalent chirp and DFB laser thereof

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[0041] The present invention will be further described below in conjunction with the accompanying drawings.

[0042] Preparation method of DFB semiconductor laser based on reconstruction-equivalent chirped asymmetric phase shift and equivalent apodization sampling grating; refer to figure 1 The variation of the refractive index modulation intensity and the sampling duty ratio of the ±1st order sub-gratings of the sampling grating may be sinusoidal. The sampling grating in the laser cavity is designed based on the reconstruction-equivalent chirp technology and contains the equivalent grating corresponding to the ordinary Bragg grating. The phase shift of the grating is introduced by the equivalent phase shift design, and the equivalent phase shift area deviates from the laser The center of the cavity length is biased toward the laser output end, within the range of 50% to 80% of the laser cavity length, and a symmetrical equivalent apodization with the same apodization length a...

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Abstract

The invention discloses an asymmetric phase shifting and equivalent apodization sampling optical grating based on reconstruction-equivalent chirp and a DFB laser of the optical grating. The equivalent apodization sampling optical grating is of a sampling Bragg grating structure designed based on the reconstruction-equivalent chirp technology, the optical grating structure comprises an equivalent optical grating corresponding to a common Bragg grating, asymmetric phase shifting in the reconstruction-equivalent apodization sampling optical grating is performed in the length center of a position deviation cavity of an equivalent phase shifting area, deviates towards the laser output end, and is within the 50 percent to 80 percent of the position area range of the optical grating cavity length, and equivalent apodization with the same apodization length and apodization degree is introduced in the left side and the right side of the equivalent phase shifting area. Due to deviation shifting of the phase shifting, the luminous power of the output end is effectively increased, the apodization structure of the sampling optical grating in the cavity enables modulation intensity of the refractive index has the tendency of being gradually increased towards two ends from the position nearby the phase shifting area, the space hole-burning effect is effectively weakened, and the single-longitudinal mode stability of the laser device in the high-power work process is improved.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, relates to a distributed feedback (DFB) laser with phase shift, and relates to optical communication, photon integration, photoelectric sensing and other application devices in the field of photoelectric information. Background technique [0002] High power, single longitudinal mode, narrow linewidth distributed feedback (DFB) semiconductor laser is the core light source of modern optical fiber communication technology. In order to improve the single longitudinal mode yield of DFB semiconductor lasers, a λ / 4 phase shift is introduced at the center of the laser cavity, but the λ / 4 phase shift structure makes the optical field distribution of the laser discontinuous at the center of the cavity, and in the center There is a sharp peak at the position, and the high concentration of the optical field in the center leads to a large consumption of carriers here, resulting in a spatial hole-burni...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12
Inventor 郑俊守陈向飞唐松张云山李思敏施跃春
Owner NANJING UNIV
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