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Method for manufacturing semiconductor light emitting device

A technology for light-emitting devices and semiconductors, applied in semiconductor devices, electric solid state devices, electrical components, etc., and can solve problems such as poor current spread

Active Publication Date: 2016-10-12
SEMICON LIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this structure reduces the light absorption of the metal reflective film 904, it has the disadvantage that the current spreading is relatively poor compared to using the electrodes 901, 902, and 903.

Method used

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  • Method for manufacturing semiconductor light emitting device
  • Method for manufacturing semiconductor light emitting device
  • Method for manufacturing semiconductor light emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0058] Now, the present disclosure will be described in detail with reference to the accompanying drawings.

[0059] Figure 3 to Figure 5 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure, in which, image 3 is along Figure 4 The cross-sectional view taken by the line A-A, while Figure 5 is along Figure 4 A cross-sectional view taken along the line B-B. For the sake of illustration, in Figure 4 The non-conductive reflective film 91 and the electrode 92 are not shown.

[0060] The semiconductor light emitting device comprises: a substrate 10; a buffer layer 20 grown on the substrate 10; an n-type semiconductor layer 30 grown on the buffer layer 20; an active layer grown on the n-type semiconductor layer 30, via electron- hole recombination to generate light; and p-type semiconductor layer 50 grown on active layer 40 . The substrate 10 which can be finally removed is mainly made of sapphire, SiC, Si, GaN...

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Abstract

The present disclosure relates to a method of manufacturing a semiconductor light emitting element, the method including: forming a branch electrode to be electrically connected with a second semiconductor layer; and forming a non-conductive reflective film composed of a plurality of dielectric films on the branch electrode to The active layer reflects light to the first semiconductor layer on the side of the growth substrate, which includes forming an underlayer by chemical vapor deposition, and forming at least two layers by physical vapor deposition, wherein the underlayer is thicker than all layers laminated above the underlayer. The thickness of each of the at least two layers is thick; and an electrical connection is formed, and the electrical connection penetrates the non-conductive reflective film and is electrically connected to the branch electrode.

Description

technical field [0001] The disclosure generally relates to methods of fabricating semiconductor light emitting devices, and more particularly, to a process for fabricating semiconductor light emitting devices having light reflecting surfaces. [0002] In the context of this document, the term "semiconductor light emitting device" refers to a semiconductor optical device that generates light via electron-hole recombination, and one example is a Group III nitride semiconductor light emitting device. Group III nitride semiconductors are composed of Al( x )Ga( y )In (1-x-y) N (wherein, 0≤x≤1, 0≤y≤1, 0≤x+y≤1) compound composition. Another example thereof is a GaAs-based semiconductor light emitting device for red light emission. Background technique [0003] This section provides background information related to the present disclosure which is not necessarily prior art. [0004] figure 1 is an example illustrating a semiconductor light emitting device proposed in US Patent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/36H01L33/46
CPCH01L33/46H01L33/38H01L2933/0025H01L2224/16245H01L33/005H01L2933/0058H01L33/382H01L33/387H01L33/007H01L33/32H01L33/405H01L33/42H01L33/44
Inventor 全水根朴恩铉金勈德
Owner SEMICON LIGHT