Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet and melt method for crystal growth thereof

A technology of ion doping and crystal growth, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of low pumping efficiency, narrow ion absorption band, narrow spectral width and so on

Inactive Publication Date: 2014-08-13
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

But Pr 3+ Ions have the disadvantage of narrow absorption band. At the same time, due to the narrow spectral width of LD, the emission wavelength will drift with the change of operating temperature. 3+ The pumping efficiency of ion-doped materials is generally low

Method used

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  • Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet and melt method for crystal growth thereof
  • Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet and melt method for crystal growth thereof
  • Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet and melt method for crystal growth thereof

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example 1

[0019] Example 1. Growth of Pr: (Ca, Mg, Zr) GGG crystals by melt method

[0020] (1), Pr: (Ca, Mg, Zr) GGG crystal growth ingredients:

[0021] Using Pr 6 o 11 , Gd2O 3 , Ga 2 o 3 , CaO, MgO, ZrO 2 As a raw material, the molar ratio of the following chemical formula is used for batching and fully mixed evenly:

[0022]

[0023]

[0024] If the segregation effect in the crystal growth process is considered, the segregation coefficient of a certain element in the Pr: (Ca, Mg, Zr) GGG crystal is k, k=0.01-1, then when the (1) When the mass of the compound of this element in the compound formula is W, it should be adjusted to W / k in the ingredients.

[0025] (2) Pressing and sintering of raw materials:

[0026] Press and sinter the uniformly mixed raw material components to obtain the initial raw material for crystal growth. The sintering temperature is 1000-1600°C and the time is 10-72 hours. The raw material after pressing can also be used as the initial raw mater...

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Abstract

The present invention discloses visible laser crystals of a Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet with broadband absorption and a melt method for the crystal growth of the garnet. The crystal has a molecular formula of Pr<3delta> Ca<3x>Gd<3(1-x-delta)>Mg<y>Zr<z>Ga<5(1-y-z)>O<12+delta-15x-2.5y+2.5z>, wherein 0 < x + delta < 1, 0 < y + z < 1. By adjusting the crystal components, an absorption bandwidth of Pr3 + ions is broadened, pumping efficiency within crystal visible band is improved. By adopting traditional crystal pulling method, crucible descent method, flux growth method and other melt method to carry out directional or non-directional crystal growth, the obtained crystals can be used as working substances for all solid state lasers. The present invention has broad application prospects in areas of laser display, laser communication, information storage and the like.

Description

technical field [0001] The invention relates to the field of laser materials and crystal growth, in particular to a broadband absorption visible laser crystal Pr 3+ Ion-doped calcium-magnesium-zirconium-gadolinium-gallium garnet and its crystal growth method by melt method. technical background [0002] All-solid-state visible light band laser has broad application prospects in many fields such as laser display, laser communication, information storage, laser medical treatment, and material processing, and is currently a hot spot in the research of all-solid-state laser technology. Previously, due to the lack of effective semiconductor diode (LD) pump sources, the research progress of all-solid-state lasers in the visible light band was slow. In recent years, the blue-violet LD has developed greatly, the output power has increased rapidly, and the price has also decreased, which provides conditions for the realization of all solid-state visible lasers. Therefore, visible l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B11/00C30B15/00H01S3/16
Inventor 刘文鹏张庆礼殷绍唐孙敦陆孙贵华罗建乔王小飞高进云
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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