Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet and melt method for crystal growth thereof

A technology of ion doping and crystal growth, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of low pumping efficiency, narrow ion absorption band, narrow spectral width and so on

Inactive Publication Date: 2014-08-13
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But Pr 3+ Ions have the disadvantage of narrow absorption band. At the same time, due to the narrow spectral width of LD, the emission wavelength will drift with the change of operating temperature. 3+ The pumping efficiency of ion-doped materials is generally low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet and melt method for crystal growth thereof
  • Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet and melt method for crystal growth thereof
  • Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet and melt method for crystal growth thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0019] Example 1. Growth of Pr: (Ca, Mg, Zr) GGG crystals by melt method

[0020] (1), Pr: (Ca, Mg, Zr) GGG crystal growth ingredients:

[0021] Using Pr 6 o 11 , Gd2O 3 , Ga 2 o 3 , CaO, MgO, ZrO 2 As a raw material, the molar ratio of the following chemical formula is used for batching and fully mixed evenly:

[0022]

[0023]

[0024] If the segregation effect in the crystal growth process is considered, the segregation coefficient of a certain element in the Pr: (Ca, Mg, Zr) GGG crystal is k, k=0.01-1, then when the (1) When the mass of the compound of this element in the compound formula is W, it should be adjusted to W / k in the ingredients.

[0025] (2) Pressing and sintering of raw materials:

[0026] Press and sinter the uniformly mixed raw material components to obtain the initial raw material for crystal growth. The sintering temperature is 1000-1600°C and the time is 10-72 hours. The raw material after pressing can also be used as the initial raw mater...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses visible laser crystals of a Pr3+ ions doped calcium, magnesium, zirconia, gadolinium and gallium garnet with broadband absorption and a melt method for the crystal growth of the garnet. The crystal has a molecular formula of Pr<3delta> Ca<3x>Gd<3(1-x-delta)>Mg<y>Zr<z>Ga<5(1-y-z)>O<12+delta-15x-2.5y+2.5z>, wherein 0 < x + delta < 1, 0 < y + z < 1. By adjusting the crystal components, an absorption bandwidth of Pr3 + ions is broadened, pumping efficiency within crystal visible band is improved. By adopting traditional crystal pulling method, crucible descent method, flux growth method and other melt method to carry out directional or non-directional crystal growth, the obtained crystals can be used as working substances for all solid state lasers. The present invention has broad application prospects in areas of laser display, laser communication, information storage and the like.

Description

technical field [0001] The invention relates to the field of laser materials and crystal growth, in particular to a broadband absorption visible laser crystal Pr 3+ Ion-doped calcium-magnesium-zirconium-gadolinium-gallium garnet and its crystal growth method by melt method. technical background [0002] All-solid-state visible light band laser has broad application prospects in many fields such as laser display, laser communication, information storage, laser medical treatment, and material processing, and is currently a hot spot in the research of all-solid-state laser technology. Previously, due to the lack of effective semiconductor diode (LD) pump sources, the research progress of all-solid-state lasers in the visible light band was slow. In recent years, the blue-violet LD has developed greatly, the output power has increased rapidly, and the price has also decreased, which provides conditions for the realization of all solid-state visible lasers. Therefore, visible l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B11/00C30B15/00H01S3/16
Inventor 刘文鹏张庆礼殷绍唐孙敦陆孙贵华罗建乔王小飞高进云
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com