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A granular thin film magnetoresistance device and its preparation

A magnetoresistance and thin film technology, which is applied in the manufacture/processing of magnetic field controlled resistors and electromagnetic devices, etc., can solve the problems of low room temperature magnetoresistance, limited research system, difficulty in preparing metal-organic semiconductor particle thin films, etc., to achieve compatibility The effect of good performance and high film quality

Active Publication Date: 2017-01-18
NANKAI UNIV
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  • Claims
  • Application Information

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Problems solved by technology

However, due to the difficulty in the preparation of metal-organic semiconductor particle films, the existing preparation methods mostly use co-evaporation, and most of the researched systems use Co as the metal nanomaterial. For example, X.M.Zhao et al. provided a Co / Alq 3 Granular thin film, studied its magnetoresistance effect, and obtained a negative magnetoresistance of -0.23% at room temperature (Journal of Magnetism and Mangetic Materials 321, 418-422, 2009); P.Sheng et al. prepared a A Co / TPD particle thin film, the room temperature magnetoresistance is -0.3% (Journal of Alloys and Compounds, 477, 32-35, 2009); S. Tanabe et al. also prepared a Co-Alq 3 Granular film, room temperature magnetoresistance is -0.1% (Applied Physics Letters 91, 063123, 2007); T.Wen et al prepared Co / P3HT granular film, the film does not appear room temperature magnetoresistance (Applied Physics Letters 95, 082509, 2009 )
The existing research results show that the room temperature magnetoresistance of organic particle films is low, and the research system is very limited. It is urgent to expand the material range of organic particle film magnetoresistance devices and obtain higher room temperature magnetoresistance

Method used

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  • A granular thin film magnetoresistance device and its preparation

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Embodiment 1

[0019] Dissolve 50mg of organic semiconductor P3HT in 5ml of chloroform organic solvent, and stir for 24 hours in the dark at room temperature to fully dissolve P3HT; drop the mixed solution on a clean glass substrate, turn on the spin coater for spin coating, The rotation speed of the spin coater was set to 2000rpm, and the spin coating time was 30s to obtain a glass sheet covered with P3HT; put the glass sheet in a vacuum drying oven and dry it in vacuum at 80°C for 10 hours to obtain a P3HT film; The FJL560C double-chamber ultra-high vacuum magnetron and ion beam coating device produced by Keyi Center is used for the preparation of nickel thin films: the prepared P3HT thin film substrate is installed on the substrate turntable of the ion beam deposition system, vacuumed, and used as a vacuum chamber Pressure lower than 6.67×10 -4 Pa began to deposit nickel film. During the deposition process, nickel with a purity of 99.99% was selected as the sputtering target, and the sub...

Embodiment 2

[0022] Dissolve 50mg of organic semiconductor P3HT in 5ml of chloroform organic solvent, and stir for 24 hours in the dark at room temperature to fully dissolve P3HT; drop the mixed solution on a clean glass substrate, turn on the spin coater for spin coating, The rotation speed of the spin coater was set to 4000rpm, and the spin coating time was 30s to obtain a glass sheet covered with P3HT; put the glass sheet in a vacuum drying oven and dry it in vacuum at a temperature of 80°C for 10 hours to obtain a P3HT film; The FJL560C double-chamber ultra-high vacuum magnetron and ion beam coating device produced by Keyi Center is used for the preparation of nickel thin films: the prepared P3HT thin film substrate is installed on the substrate turntable of the ion beam deposition system, vacuumed, and used as a vacuum chamber Pressure lower than 6.67×10 -4 Pa began to deposit nickel film. During the deposition process, nickel with a purity of 99.99% was selected as the sputtering ta...

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Abstract

The invention relates to a Ni / P3HT particle film magneto-resistance device and a preparation method thereof. According to the novel magneto-resistance device, the method combining spin coating and ion beam deposition is adopted in the preparation process. The method is flexible and simple, low in cost and good in compatibility with an existing film technology, quality of obtained films is good, and the obtained magneto-resistance device is high in indoor temperature magneto-resistance.

Description

technical field [0001] The invention relates to a Ni / P3HT granular film magnetoresistance device and a preparation method. Background technique [0002] Nano-magnetic metal particle film is a kind of artificial structure nano-functional material composed of nano-scale magnetic metal particles randomly distributed in the insulating matrix material. The material is usually composed of two parts: magnetic metal particles and insulating matrix. Or the physical properties of the insulator matrix, such as giant Hall effect, high coercive force, high-frequency soft magnetism, magnetoresistance effect and other novel physical properties. Among them, the magnetoresistance effect of nano-magnetic metal particle thin films has been widely used in many fields such as computer readout heads and magneto-sensitive sensor devices due to its high magnetic field sensitivity, and has achieved significant economic and social benefits. [0003] At present, the vast majority of magnetic metal pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/12
Inventor 程雅慧贺婕刘晖刘孟寅
Owner NANKAI UNIV
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