Measuring structure and method for Poisson's ratio of thin film silicon material on insulating substrate

A technology for testing structures on an insulating substrate, applied in the direction of analyzing materials, measuring devices, instruments, etc., can solve problems such as device design and performance prediction uncertainty, instability, etc., to achieve stable test process and test parameter values, and test methods The effect of simple and simple calculation method

Inactive Publication Date: 2016-02-10
SOUTHEAST UNIV
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Problems solved by technology

[0002] The performance of microelectromechanical devices is closely related to material parameters. Due to the influence of processing, some material parameters will change. These uncertain factors caused by processing technology will make device design and performance prediction uncertain and unstable. Case

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  • Measuring structure and method for Poisson's ratio of thin film silicon material on insulating substrate
  • Measuring structure and method for Poisson's ratio of thin film silicon material on insulating substrate
  • Measuring structure and method for Poisson's ratio of thin film silicon material on insulating substrate

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Embodiment Construction

[0032] Attached below figure 1 , figure 2 and image 3 The present invention will be further described.

[0033] The invention provides a test structure for measuring the Poisson's ratio of a thin film silicon material on an insulating substrate. The test structure consists of two sets of structures. The first set of structures such as figure 1 As shown, this group of structures consists of a polysilicon cantilever beam 101, a thin-film silicon cross beam 103, and a backing plate 102 made of thin-film silicon; the second group is as figure 2 As shown, it consists of a polysilicon cantilever beam 101 and a backing plate 102 made of thin film silicon. The difference between the two groups of structures is whether or not the thin-film silicon cross beam 103 is included, and other corresponding unit structures and geometric dimensions in the two groups of structures are identical.

[0034]The polysilicon cantilever beam 101 of the first group of test structures consists of...

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Abstract

The invention relates to a structure and a method for testing the Poisson ratio of a thin-film silicon material positioned on an insulating substrate. The testing structure comprises two groups of structures, wherein the first group of structure comprises a polycrystalline silicon cantilever beam (101), a thin-film silicon rood beam (103) and a backing plate (102) made from thin-film silicon; the second group of structure comprises the polycrystalline silicon cantilever beam and the backing plate made from the thin-film silicon; a unit which actually measures the Poisson ratio of the thin-film silicon is the thin-film silicon rood beam (103), the difference of the two groups of structures is whether the thin-film silicon rood beam (103) is included or not, and other corresponding unit structures and geometric dimensions in the two groups of structures are completely same. According to the testing structure, the polycrystalline silicon cantilever beam is downwards bent by applying electrostatic force to downwards press the thin-film silicon rood beam and the backing plate so as to contact with the insulating substrate; the force needed for independently driving the thin-film silicon rood beam (103) to be turned to a testing angle is extracted through the testing of the two groups of structures, and the Poisson ratio of the thin-film silicon material on the insulating substrate can be calculated through the force, the testing angle, Young modulus and the geometric dimension.

Description

technical field [0001] The invention provides a test structure for Poisson's ratio of thin film silicon material on an insulating substrate. The invention belongs to the technical field of microelectromechanical system (MEMS) material parameter testing. Background technique [0002] The performance of microelectromechanical devices is closely related to material parameters. Due to the influence of processing, some material parameters will change. These uncertain factors caused by processing technology will make device design and performance prediction uncertain and unstable. Case. The purpose of material parameter testing is to be able to measure the material parameters of MEMS devices manufactured by a specific process in real time, monitor the stability of the process, and feed back the parameters to the designer so that the design can be corrected. Therefore, testing without leaving the processing environment and using general-purpose equipment has become a necessary me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N3/00G01N3/02
Inventor 李伟华王雷张璐周再发
Owner SOUTHEAST UNIV
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