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Method for producing silicon-containing film and method for manufacturing photoelectric conversion device

A manufacturing method, technology of silicon thin film, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as film peeling

Inactive Publication Date: 2014-09-10
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the film is grown on the surface with impurities attached, the grown film may peel off

Method used

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  • Method for producing silicon-containing film and method for manufacturing photoelectric conversion device
  • Method for producing silicon-containing film and method for manufacturing photoelectric conversion device
  • Method for producing silicon-containing film and method for manufacturing photoelectric conversion device

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no. 1 approach ＞

[0031] The method for producing a silicon-containing thin film according to the first embodiment of the present invention includes a dry cleaning step, a substrate loading step, a cleaning step using silane gas, and a silicon-containing thin film forming step. For convenience of description, the dry cleaning step, the substrate loading step, and the cleaning step using silane-based gas will be described below after the silicon-containing thin film forming step.

[0032]

[0033] The silicon-containing thin film is formed on the film-forming surface (the surface of the substrate on which the silicon-containing thin film is formed) of the substrate carried into the chamber. After forming a silicon-containing thin film having a predetermined film thickness on the film-forming surface of the substrate, the substrate is taken out of the chamber.

[0034] The method for forming the silicon-containing thin film on the film-forming surface of the substrate is not particularly limite...

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Abstract

This method for producing a silicon-containing film (1) comprises: a first step wherein the inside of a chamber (2) is dry cleaned with use of a fluorine-containing gas; a second step wherein a substrate (10) is brought into the chamber (2); a third step wherein the inside of the chamber (2) is purged with a silane-based gas, while having the substrate (10) held within the chamber (2); and a fourth step wherein a silicon-containing film (1) is formed on the substrate (10) after the third step.

Description

technical field [0001] The present invention relates to a method for manufacturing a silicon-containing thin film and a method for manufacturing a photoelectric conversion device. Background technique [0002] A chemical vapor deposition (Chemical Vapor Deposition (hereinafter referred to as "CVD")) method is generally used as a method for forming a silicon film used in a thin film solar cell or the like. When the silicon film is grown by the CVD method, some impurities adhere to the surface of the substrate or the like. When a film is grown on a surface to which impurities are adhered, the grown film may be peeled off. Therefore, a method of removing impurities adhering to the surface of the substrate or the like before proceeding to the film forming step has been proposed. [0003] For example, Patent Document 1 (JP-A-2001-53309) and the like propose a method of performing a film-forming step after washing the substrate surface with pure water. In addition, the film for...

Claims

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Application Information

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IPC IPC(8): H01L21/205C23C16/44H01L31/18H01L31/0392
CPCC23C16/24H01L21/02046H01L31/18H01L21/02532C23C16/4408Y02E10/547H01L31/1804C23C16/4405H01L21/0262H01L31/03921Y02P70/50
Inventor 奈须野善之东名敦志
Owner SHARP KK