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Method for detecting detachment of metal layer on back side of semiconductor chip

A backside metallization and backside metallization technology, used in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems of low efficiency, high cost, long test cycle, etc., to improve reliability and reduce testing costs. Effect

Active Publication Date: 2016-08-17
江苏新顺微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] 1. High cost;
[0011] 2. The test cycle is long and the efficiency is low;
[0019] 3. General test reliability
[0020] In summary: the current two detection methods can not meet the requirements of high efficiency, high reliability, and lossless detection of metal layer separation on the back of the chip, and are not suitable for industrial production

Method used

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Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0033] The invention relates to a method for detecting the separation of a metal layer on the back of a semiconductor chip, the method comprising the following steps:

[0034] Step 1. Paste a thin film on the metallization layer on the back of the chip to be tested

[0035] When pasting, place the chip on a clean, particle-free platform, and use a roller to evenly paste the film on the metallized layer on the back of the chip. There are no bubbles, particles, etc. in between, and the adhesive force of the film is required to be greater than 3.0N / 20mm to ensure the adhesive force between the metallized layer on the back of the chip and the chip. The ductility of the film should be less than 150% to ensure that there is no residue after tearing the film ;The film itself is soft and cannot be rigid, and the color of the film is uniform, without metallic luster, and the whole is transparent or translucent. Due to the high requirements for pasting, the rollers used cannot use norma...

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PUM

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Abstract

The invention relates to a method for detecting separation of a metal layer on the back face of a semiconductor chip. The method is characterized by comprising the following steps that firstly, a layer of thin film is pasted on the metallization layer on the back face of the chip to be detected, the chip is placed on a clean platform without particles, and the thin film is evenly pasted on the metallization layer on the back face of the chip; secondly, the chip with the thin film pasted is baked, the pasted chip is placed in an oven, meanwhile, the oven is filled with nitrogen for protection, the temperature of the oven is required to be between 80 DEGC and 100 DEG C, baking time ranges from 25 minutes to 30 minutes, and flow needed by the nitrogen ranges from 9 L / min to 11 L / min; thirdly; the thin film on the metallization layer on the back face of the chip is torn off, the chip in the second step is taken out of the oven and is cooled for five minutes, and the thin film pasted on the metallization layer on the back face of the chip is removed.

Description

technical field [0001] The invention relates to a method for detecting separation of a metal layer on the back side of a semiconductor chip. The invention belongs to the technical field of integrated circuit or discrete device chip detection. Background technique [0002] Whether it is a satellite rocket missile submarine, or a color TV refrigerator audio air conditioner in daily use, semiconductor devices such as diodes, triodes, and integrated circuits are inseparable. Once a semiconductor device fails, the loss will be huge. In some special cases, even Disastrous consequences, and the pros and cons of the metallization system and metallization process will directly affect the electrical characteristics and reliability of semiconductor devices. NASA conducted an anatomical analysis of the failed products and found that failures related to metallization accounted for 56% of the total failure rate of the device. It can be seen that metallization has a great impact on the re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 袁昌发吕邦贵袁浩李建立叶新民顾中平
Owner 江苏新顺微电子股份有限公司