Temperature compensation method and temperature control method and system for thermal treatment equipoment

Abstract

The invention discloses a temperature compensation method. The temperature compensation method comprises the steps of installing a plurality of second temperature sensors on a silicon wafer containing part, moving the silicon wafer containing part into a processing container, enabling the second temperature sensors to correspond to a plurality of first temperature sensors in the processing container in a one-to-one mode, controlling a heater to use the second temperature sensors as temperature control objects to adjust temperature in the processing container to enable temperatures collected by the second sensors to rise to a plurality of discrete temperature points, controlling the collected temperatures to be constant for a certain time section at the discrete temperature points when the collected temperatures are converged at the discrete temperature points, periodically recording the temperatures collected by the first temperature sensors and the temperatures collected by the second temperature sensors in a constant temperature time section of each discrete temperature point, calculating out temperature difference values between the temperatures collected by the first temperature sensors and the temperatures collected by the second temperature sensors, and calculating out the temperature difference values corresponding to the collected temperatures of the first temperature sensors as temperature compensation values through a linear interpolation method in an online mode according to the discrete temperature points and the temperature difference values corresponding to the discrete temperature points in actual thermal treatment process. The temperature compensation method can restrain instant power shake in a temperature rise period.

Description

technical field [0001] The invention relates to the technical field of temperature control of semiconductor heat treatment process, in particular to a temperature compensation method, a temperature control method and a temperature control system applied to heat treatment equipment. Background technique [0002] Silicon wafer is an important semiconductor material. At present, vertical heat treatment equipment with higher automation and better process performance is generally used to perform batch processing processes on silicon wafers, such as deposition, oxidation and diffusion. With the reduction of process feature size, higher requirements are put forward for the processing precision of the silicon wafer surface, which all depend on the accuracy of temperature control in the process, especially the control accuracy of the silicon wafer surface temperature. [0003] However, in the actual process, the temperature of the silicon wafer cannot be directly measured, because if...

AI Technical Summary

Problems solved by technology

However, if an inappropriate compensation method is adopted, in the initial stage of RampUp of the process, the deviation of the calculated temperature compensation value will cause a sudden change in the actual temperature control object CtrlTemp, resulting in instantaneous power jitter

Especially the CVD process will cause particle problems due to the instantaneous jitter of the power

In addition, the oxidation process will also prolong the temperature convergence time and even the process time due to power jitter, reducing equipment productivity

Images