On-line failure analysis method of static memory and on-line electron beam testing equipment

Abstract

The invention provides an online failure analysis method for a static memory and online electronic beam detection equipment. The method comprises the following steps: arranging different types of probes in the cavity of the online electronic beam detection equipment; placing a wafer into the cavity of the online electronic beam detection equipment; scanning contact holes by using the online electronic beam detection equipment, and acquiring image information about the contact holes in the static memory; finding out defective contact holes according to the image information about the contact holes; selecting corresponding probes according to the types of the defective contact holes; controlling selected probes to be contacted with corresponding defective contact holes by using the online electronic beam detection equipment, and performing electrical performance detection; combining the probes by using the online electronic beam detection equipment according to the functions of the defective contact holes in a static memory unit to detect a function and perform failure analysis; when failure of the function is detected, determining that the defective contact holes are the causes of failure of the static memory.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an online failure analysis method of a static memory and an online electron beam detection device. Background technique [0002] Simply speaking, the integrated circuit manufacturing process is to transfer the circuit pattern to the silicon chip through physical and chemical methods. A fully functional chip can include logic operation area, static memory area, and surrounding circuit wiring from its functional area. Among them, the static memory is the area with the highest circuit density on the entire chip, and some slight deviations in the manufacturing process will cause the failure of the entire static memory. [0003] see figure 1 , is a schematic diagram of the structure of the wafer after the contact hole is formed, figure 1 Among them, the left side represents PMOS, and the right side represents NMOS. After the contact hole is formed, use the online electron be...

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Problems solved by technology

[0004] However, although online electron beam inspection equipment can be used to detect whether a contact hole has a defect, it is difficult to detect the cause of the defect. One is because there are many reasons for the defect in the contact hole; The equipment also cannot detect, and even with a very high-resolution transmission electron microscope, it is difficult to see the structural defects that cause the defects.

[0005] Furthermore, the current stage of static memory testing is offline nano-probing after the final device is formed. Due to the need to locate the failure address, offline nano-probing is very difficult in terms of operation.

Moreover, the use of offline nanoscale detection to analyze the cause of defects is lack of timeliness. Even if some contact holes are detected to have problems, they cannot be remedied in time, and the devices can only be scrapped, resulting in serious waste.

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