Infrared detector and method of making the same

Abstract

The invention discloses an infrared detector, which comprises a semi-insulating gallium arsenide single-crystal substrate and an n+ lower electrode contact layer, a dark current blocking layer, a quantum dot active region, an n+ middle electrode contact layer and a p+ upper electrode contact layer sequentially formed on the semi-insulating gallium arsenide single-crystal substrate, wherein a lower electrode, a middle electrode and an upper electrode are respectively formed on the n+ lower electrode contact layer, the n+ middle electrode contact layer and the p+ upper electrode contact layer; and the thickness of the n+ middle electrode contact layer is smaller than the diffusion length of hole carriers. The invention also discloses an infrared detector manufacturing method and an infrared detection system. as the upper electrode contact layer is arranged and differential amplification circuits are used for connection, visible light, energetic particles and detector noise signals caused by ray irradiation can be weakened or even eliminated, normal-incidence infrared radiation photons can be directly absorbed, and the anti-blinding function against the visible light and the anti-radiation function are provided.

Description

technical field [0001] The invention relates to the technical field of infrared detection, and specifically relates to a radiation-resistant indium gallium arsenide / gallium arsenide (InGaAs / GaAs) quantum dot infrared detector and a manufacturing method. Background technique [0002] At present, infrared detectors are more and more widely used in modern military and civilian fields, especially as the core components of various space infrared systems. High application value. However, when infrared detectors work in space, they will inevitably be irradiated by visible light, high-energy electrons, protons, α, β, γ-rays, and x-rays, resulting in radiation damage and degraded device performance. In particular, the interaction between high-energy particle radiation and infrared detectors is mainly manifested in two forms: 1. The process of ionization and excitation, which will produce instantaneous disturbances in the electrical properties of semiconductor materials, and the infr...

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Problems solved by technology

[0005] Since III-V semiconductor materials have high crystalline quality and strong chemical bonds, they can withstand high-energy particle radiation without atomic displacement process. Therefore, quantum materials prepared by InGaAs / GaAs materials Point infrared photodetectors can overcome atomic displacement when used in space, but irradiation of visible light and high-energy electrons, protons, and alpha, beta, gamma, and x-rays can still cause ionization and excitation processes in III-V semiconductor materials , that is, the electrons in the semiconductor material undergo interband transitions under the irradiation of high-energy photons, generating an equal number of electrons and holes, which affect the detection results

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