Intelligent power module and manufacturing method thereof
A technology of intelligent power module and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor device, electrical components and other directions, can solve the problems of easy interference, large distance between components, long wiring, etc., to reduce the long wiring , to ensure the sameness, the effect of line reduction
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[0042] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0043] to combine Figure 2 (A) , 2(B) , 2(C), 2(D), in one embodiment, the intelligent power module 1 includes a metal substrate 306, an insulating layer 307, a circuit wiring layer 308, a plurality of IGBT tubes 20, and FRD tubes having the same number as the IGBT tubes 20 10. The number of gate drive transistors 40 and metal wires 305 is the same as that of the IGBT transistors 20 .
[0044] One surface of the metal substrate 306 is covered with an insulating layer 307 . The circuit wiring layer 308 is formed on the surface of the insulating layer 307 . A pl...
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