RF power amplifier and electronic system
A technology of radio frequency power and electronic systems, applied in the direction of high-frequency amplifiers, etc., can solve the problems of .2 volts to 4.2 volts, affecting the output power accuracy of radio frequency power amplifiers, etc.
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[0056]The terms first, second, third etc. may be used herein to describe various elements, but these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, a first element discussed below could be termed a second element without departing from the teachings of the inventive concepts.
[0057] A 3G power amplifier (PA) module in the prior art adopts a two-chip design, one CMOS chip provides a reference voltage and reference current and a control circuit, and the other GaAs chip provides a power amplifier circuit.
[0058] At least one embodiment of the present disclosure is designed using GaAs HBT+D-mode pHEMT process , The 3G PA module can be made into a single crystal, and the characteristics of this disclosure are that no reference voltage is required, and the circuit is simplified and the area is reduced.
[0059] [Example of RF Power Amplifier]
[0060] Please refer to figure 1 , figure 1 It is a schematic ...
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