Sonos flash memory device and compiling method thereof

Abstract

The invention discloses an SONOS flash memory device which comprises a substrate and a split grid structure located on the substrate. The split grid structure comprises a first oxidation layer, a polycrystalline silicon control grid, a silicon nitride grid and a second oxidation layer, wherein the first oxidation layer makes contact with the semiconductor substrate, the polycrystalline silicon control grid and the silicon nitride grid are located on the first oxidation layer, and the second oxidation layer isolates the polycrystalline silicon control grid from the silicon nitride grid. When the SONOS flash memory device is used for compiling, a first grid voltage higher than or equal to a threshold voltage is applied to the polycrystalline silicon control grid, a second grid voltage higher than the first grid voltage is applied to the silicon nitride grid, and a positive substrate bias voltage is applied to the semiconductor substrate, so that electrons of a channel electron layer induced in the position, below the polycrystalline silicon control grid, of the semiconductor substrate under the action of the first grid voltage are accelerated under the action of the substrate bias voltage and injected into the silicon nitride grid under the action of the second grid voltage. Thus, channel hot electron injection efficiency can be improved, current power consumption is reduced, and the size of the device is reduced.

Description

Technical field [0001] The invention relates to a memory, in particular to a SONOS flash memory device and a compilation method thereof. Background technique [0002] With the SONOS (Silicon-Oxide-Nitride-Oxide-Silicon, silicon-oxide-nitride-oxide-silicon) structure gradually replacing the polysilicon floating gate flash memory structure as the main flash memory storage structure for nonvolatile memory, about How to improve the compilation speed of SONOS structure is increasing. [0003] One of the main compilation mechanisms used in SONOS flash memory devices is the channel hot electron (CHE) injection effect. Channel hot electron injection is considered to be quite reliable even after long-term cycles, because it does not impose great stress on the tunnel oxide layer. But the disadvantage of CHE lies in the low injection efficiency of compilation. This is because the direction of the electric field of the channel at the injection point close to the drain end is not conducive t...

AI Technical Summary

Problems solved by technology

As a compromise solution, the SONOS flash memory device with CHEI as the compilation mechanism must apply a high voltage to both the drain and the gate, but this also leads to low channel hot electron injection efficiency and high current consumption.

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