OPC method for reducing correction iterations

A technology of iteration times and correction amount, applied in the field of OPC that reduces the number of correction iterations, can solve the problems of OPC without considering the offset change of mask lithography conditions, and the decrease of OPC accuracy, so as to reduce the OPC correction time and improve the correction efficiency. Effect
CN104166305AActive Publication Date: 2014-11-26SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Publication Date
2014-11-26

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Abstract

The invention provides an OPC method for reducing correction iterations. The OPC method comprises the following steps: executing an OPC process, thereby obtaining an original OPC correction diagram via original iterations; verifying the original OPC correction diagram; finding out the difference between the original correction diagram and a target diagram as the original OPC correction quantity, and setting the supercritical value of the original OPC correction; marking a target diagram with the original OPC correction quantity exceeding the critical value of the original OPC correction in the original OPC correction diagram; setting new iterations, executing the new OPC iteration process, and assigning the original OPC correction quantity to the marked target diagram in the first time of iteration; acquiring and verifying the new OPC correction diagram; and judging whether the verification result of the OPC correction diagram is within the error standard, if yes, taking the new iterations as the new OPC iterations, and if not, adding one to the new iterations, and executing the new OPC process again until the verification result of the new OPC is within the error standard, so that the OPC precision is ensured, and the time is saved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to an OPC method for reducing the number of correction iterations. Background technique

[0002] In the deep submicron semiconductor manufacturing process, with the continuous reduction of feature size and the increasing complexity of patterns, OPC technology has been widely used in the reticle publishing of various key levels. The most widely used OPC method at present is the OPC correction method based on the model. Its basic principle is to simulate the original layout or the target layout by establishing an exposure model based on specific lithography conditions to obtain the simulation error, and then the original layout according to a certain Segmentation is carried out according to the rules, and the offset compensation and re-simulation are performed on the segments according to the simulation error. After several rounds of simulation and correction, the simulation re...

Claims

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