Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Atomic layer deposition method and apparatuses

A technology for atomic layer deposition and deposition of materials, which is applied in the field of deposition reactors and can solve problems such as complex devices of ALD reactors

Inactive Publication Date: 2014-12-10
PICOSUN OY
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Typical ALD reactors are very complex devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Atomic layer deposition method and apparatuses
  • Atomic layer deposition method and apparatuses
  • Atomic layer deposition method and apparatuses

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] In the following description, atomic layer deposition (ALD) technology is used as an example. The basis of the growth mechanism of ALD is known to the skilled person. As mentioned in the introduction of this patent application, ALD is a special chemical deposition method based on the sequential introduction of at least two reactive precursor substances to at least one substrate. The substrate, or in many cases a batch of substrates, is located in the reaction space. The reaction space is usually heated. The basic growth mechanism of ALD relies on the difference in bond strength between chemical adsorption (chemical adsorption) and physical adsorption (physical adsorption). During the deposition process, ALD uses chemical adsorption and eliminates physical adsorption. In the chemical adsorption process, a strong chemical bond is formed between one or more atoms on the surface of the solid phase and molecules arriving from the gas phase. The bonding by physical adsorpt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In accordance with an example embodiment of the present invention, there is provided a method that includes operating an atomic layer deposition reactor configured to deposit material on at least one substrate by sequential self-saturating surface reactions, and using dry air in the reactor as purge gas.

Description

Technical field [0001] The present invention generally relates to deposition reactors. More particularly, but not exclusively, the present invention relates to a deposition reactor in which material is deposited on the surface by sequential self-saturating surface reaction. Background technique [0002] The Atomic Layer Epitaxy (ALE) method was invented by Dr. Tuomo Suntola in the early 1970s. Another common name for this method is atomic layer deposition (ALD) and is currently used instead of ALE. ALD is a special chemical deposition method based on the sequential introduction of at least two reactive precursor substances to at least one substrate. [0003] The thin film grown by ALD is dense, pinhole-free and has a uniform thickness. For example, in an experiment, it has been passed from trimethyl aluminum (CH 3 ) 3 Thermal ALD of Al (also known as TMA) and water at 250-300°C grows alumina on the substrate wafer, which produces only about 1% non-uniformity. [0004] A typical A...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/455
CPCC23C16/45527C23C16/45546C23C16/45544C23C16/46
Inventor S·林德弗斯
Owner PICOSUN OY
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com