NMOS (N-channel metal oxide semiconductor) linear array image sensor with segmental integral reading circuit

An image sensor and line array image technology, which is applied in the field of NMOS line array image sensors, can solve the problems of long product cycle and high cost, and achieve the effect of strong function, low cost and wide application range

Inactive Publication Date: 2014-12-17
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the customization of NMOS line array image sensors is costly and has a long product cycle. Since it i

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • NMOS (N-channel metal oxide semiconductor) linear array image sensor with segmental integral reading circuit
  • NMOS (N-channel metal oxide semiconductor) linear array image sensor with segmental integral reading circuit
  • NMOS (N-channel metal oxide semiconductor) linear array image sensor with segmental integral reading circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Invention idea of ​​the present invention is:

[0024] The key point of the present invention is to realize the segmental integration function of the picture element of the image sensor by changing the external readout circuit of the NMOS line array image sensor. The invention realizes the control of whether the external driving signal reads out the sensor pixel signal by connecting the output signal and the video signal line through a strobe switch. In one frame period of the image sensor, under the action of the timing of the external drive pulse, the readout switch corresponding to each pixel is turned on sequentially, but the gate pulse Φ select Control the on and off state of the strobe switch, control whether the charge of the pixel is output to the signal output terminal and reset, so as to realize the selective readout and reset of the pixel signal of the image sensor.

[0025] The present invention will be described in detail below in conjunction with the acco...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an NMOS (N-channel metal oxide semiconductor) linear array image sensor with a segmental integral reading circuit. Output signals are connected with a video signal line through a gating switch, and bias voltage is connected with an output signal end through a series resistor; when a reading switch of a certain image element is on, if a corresponding gating switch is off, a circuit is in an open-circuit state, signals in the image element cannot be output to a signal output end, and the bias voltage cannot perform charge resetting on a circuit inside the image sensor; if the gating switch is on, the signals in the image element can be output to the signal output end, and the bias voltage can perform charge resetting on the image sensor. The NMOS linear array image sensor can realize integration of input light signals at different integral time through different image elements, namely a segmental integral function.

Description

technical field [0001] The invention relates to an NMOS linear array image sensor, in particular to an NMOS linear array image sensor with a segmented integral readout circuit. Background technique [0002] When the general-purpose products of NMOS line array image sensors are working (using the existing common driving method), in one read operation, the signals of all pixels can only be read out at one time, and the integration time of all pixels is the same. figure 1 , figure 2 The principle of readout of signal charge in one pixel is shown. During the readout process of a frame of image data of the NMOS line array image sensor, all the pixels are under the control of the external drive pulse and the internal logic circuit, the corresponding readout switch of each pixel is turned on in turn, and the image in the pixel The data is also read out sequentially, and the signals of all picture elements appear at the output signal end in sequence. During readout, the external...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H04N5/374H04N5/353
Inventor 张佩杰宋克非
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap