Reaction chamber and mocvd equipment provided with the reaction chamber

Abstract

The invention discloses a reaction chamber and MOCVD equipment provided with the reaction chamber and relates to the field of semiconductor equipment manufacturing. According to the invention, temperature uniformity of a substrate put area can be raised so as to obtain the best process effect. In addition, energy consumption can be reduced so as to decrease production costs. In the reaction chamber, an adiabatic wall, a vacuum system and a cooling gas system are arranged close to the chamber wall, wherein upper and lower ends of the adiabatic wall are fixed inside the reaction chamber respectively through an upper flange and a lower flange. The adiabatic wall contains an inner wall and an outer wall. A sealing gap is formed between the inner wall and the outer wall. The sealing gap is respectively connected with the vacuum system and the cooling gas system. The vacuum system is used for vacuumizing the sealing gap before the process. The cooling gas system is used for blowing cooling gas into the sealing gap after the process or in the stage of fast cooling during the process.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to a reaction chamber and MOCVD equipment provided with the reaction chamber. Background technique [0002] Metal-organic chemical vapor deposition (MOCVD, Metal-organic Chemical VaporDeposition) is a new type of vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth. Typical representatives use organic compounds of Group III and II elements and hydrides of Group V and VI elements as raw materials for crystal growth, and perform vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various III-V, II - Thin-layer single-crystal materials of Group VI compound semiconductors and their multi-component solid solutions. [0003] The basic structure of the MOCVD growth chamber (reaction chamber) is as follows: figure 1 As shown, the reaction chamber 20 is formed of quartz material, and the interior of th...

AI Technical Summary

Problems solved by technology

The uneven temperature of the substrate is likely to directly affect the optical quality of the film, thereby affecting the luminous efficiency of the LED chip

However, in the existing MOCVD growth chamber, the graphite tray 21 on which the substrate is placed is concentrically placed with the induction coil 22. Since the magnetic field distribution in the vertical direction inside the cavity is not uniform, such as figure 2 As shown, the distribution of magnetic field lines from the center of the reaction chamber to the inner surface of the reaction chamber is from sparse to dense, which may easily cause the surface temperature of the graphite tray to be uneven, so that the peripheral temperature of the graphite tray is high, while the middle temperature is low

Moreover, due to the low controllability of induction heating to the heating of the heating body, even if a ring belt with a relatively uniform temperature can be found on the concentric circumference of the graphite tray to hold the substrate, the problem of temperature uniformity of the graphite tray cannot be solved.

Images