Unlock instant, AI-driven research and patent intelligence for your innovation.

Compound Semiconductor Switching Device

A compound semiconductor and switching device technology, which is used in electronic switches, output power conversion devices, regulating electrical variables, etc.

Inactive Publication Date: 2017-05-17
MITSUBISHI ELECTRIC CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has been found that there is a problem that switching loss and steady state loss exist in the semiconductor element, and regarding the power loss of both, when the power loss characteristics of the first semiconductor element and the second semiconductor element constituting the composite semiconductor switching device are different , it will not be possible to properly bear the switching loss and steady-state loss of each semiconductor element according to the power loss characteristics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Compound Semiconductor Switching Device
  • Compound Semiconductor Switching Device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0030] according to figure 1 with figure 2 An embodiment of the present invention will be described. figure 1 Is an overall view showing a compound semiconductor switching device according to an embodiment of the present invention, figure 2 Is showing figure 1 A timing chart of the operation of the compound semiconductor switching device shown.

[0031] in figure 1 Here, the compound semiconductor switching device 1 includes a semiconductor switch unit 10 composed of a switchable semiconductor element, and a controller 20 that generates a control command signal to the semiconductor switch unit 10.

[0032] The semiconductor switch section 10 includes a first semiconductor element 11 composed of a SiC MOSFET, and a second semiconductor element 12 connected in parallel with the first semiconductor element 11 and composed of a Si IGBT having a larger switching loss than the first semiconductor element. In addition, the semiconductor switch section 10 has a first gate terminal Ga fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The compound semiconductor switching device has: a first semiconductor element (11), which generates switching loss with the switching action of on / off; a second semiconductor element (12), which is connected in parallel with the first semiconductor element (11), and The switching action of turning on / off produces switching loss higher than that of the first semiconductor element (11); The semiconductor element (12) provides a second conduction command signal, and then disappears the first conduction command signal, and then disappears the second conduction command signal after providing a third conduction command signal to the first semiconductor element (11).

Description

Technical field [0001] The present invention relates to a compound semiconductor switch device. Background technique [0002] The conventional compound semiconductor switching device, as shown in the following Patent Document 1, connects a metal oxide film semiconductor field effect transistor and an insulated gate bipolar transistor in parallel to perform switching operations, thereby performing power conversion. In this switching circuit, metal The gate threshold voltage of an oxide film semiconductor field effect transistor is lower than that of an insulated gate bipolar transistor. [0003] That is, the IGBT and MOSFET are connected in parallel, and the current flows in the MOSFET with a lower saturation voltage than the IGBT at low current, the IGBT and MOSFET share the current at medium current, and the current at the saturation voltage is lower than the MOSFET at high current. Flow through the IGBT. [0004] According to this compound semiconductor switching device, the satu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/687H02M1/08H02M3/155H03K17/00H02M1/00
CPCH02M1/088H03K17/164H03K17/56H03K2217/0036H03K2217/0054H02M1/0054Y02B70/10H02M1/08H03K17/687
Inventor 石川纯一郎
Owner MITSUBISHI ELECTRIC CORP