Semiconductor phase change excitation device and excitation method

A semiconductor and phase change technology, which is applied in the field of semiconductor phase change excitation devices, can solve the problems that are difficult to popularize, and achieve the effects of long service life, low cost of use, and increased heat storage density

Active Publication Date: 2019-05-21
樊建华
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above cross-season heat storage technology is difficult to promote due to technical or economic constraints

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor phase change excitation device and excitation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] Embodiments of the present invention will be described below with reference to the drawings. Elements and features described in one drawing or one embodiment of the present invention may be combined with elements and features shown in one or more other drawings or embodiments. It should be noted that representation and description of components and processes that are not related to the present invention and known to those of ordinary skill in the art are omitted from the drawings and descriptions for the purpose of clarity.

[0014] figure 1 It is the front view of the semiconductor phase change excitation device provided by the embodiment of the present invention. Such as figure 1 As shown, the semiconductor phase change excitation device provided by the embodiment of the present invention includes at least one semiconductor cooling chip 2, and the cooling side of the semiconductor cooling chip 2 is provided with a phase change medium channel.

[0015] The above sch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a semiconductor phase change excitation device and excitation method. The device comprises at least one semiconductor chilling plate, and a phase channel medium channel is arranged on the chilling side of the semiconductor chilling plate. According to the scheme, a phase change energy storage technology is adopted, through active control over phase changes, the limit of heat-sensitive energy storage is overcome, heat storage density is greatly improved, and meanwhile the aim of long-time low-heat-loss energy storage is achieved. A cross-season energy storage system adopting the scheme is low in construction and use cost, and long in service life.

Description

technical field [0001] The invention relates to the technical field of phase change material energy storage and heat supply, in particular to a semiconductor phase change excitation device and an excitation method. Background technique [0002] At present, the cross-season heat storage technologies mainly fall into the following categories: artificial water tanks, gravel heat storage, soil heat storage and underground aquifer heat storage. Artificial water tank water and gravel heat storage have the advantages of high heat capacity, good heat storage / release performance, stable performance, and no environmental pollution. The water body and gravel heat storage method of artificial water tank is to store water or gravel in the water tank, but the water tank insulation project is difficult and expensive, 10000m 3 The cost of artificial water tanks is as high as ten million yuan. The soil heat storage system usually uses buried pipes to store heat energy in the underground so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): F28D20/02F25B21/02
CPCY02E60/14
Inventor 樊建华李富玲
Owner 樊建华
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap