Erasable-resistant low-energy consumption external computer accelerating equipment
An external device and computer technology, applied in the field of computer equipment, can solve the problems of being expensive, not substantially improving hardware capabilities, and not enhancing computer performance, etc.
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[0058] The present invention has produced samples. The sample is pre-installed with a 128Mb PCRAM memory module cache area manufactured by Micron and a 128Gb 3D V-NAND manufactured by Samsung, and uses a USB3.0 interface for high-speed communication, as a random storage area of the local system to achieve acceleration and improve cache performance. Purpose. Under the USB3.0 interface, the test read rate is 400M per second, and the write rate is 220M per second, which has far exceeded the speed of low-end solid-state drives, approaching the speed of memory, and the cache speed has increased by 3 times, which has an effect on system acceleration. Very obvious.
[0059] At the same time, due to the asymmetric reading and writing between phase change memory and 3D NAND, the write operation delay is 8 times that of the read operation delay, and the sample adopts the optimization of the write operation. The read and write operations of the DRAM have similar delay characteristics...
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