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Nitride-based light-emitting diodes

A technology of light-emitting diodes and nitride systems, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing hole and electron coupling, limiting the luminous efficiency of light-emitting diodes, and low recombination probability, so as to achieve enhanced injection and diffusion, The effect of increasing the internal quantum efficiency and increasing the recombination probability

Active Publication Date: 2018-01-26
TIANJIN SANAN OPTOELECTRONICS
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Problems solved by technology

Traditional nitride-based light-emitting diodes (In x Ga 1-x N / GaN) n In the MQW structure, due to the existence of the polarization field, the energy band of the quantum well becomes inclined, causing electrons and holes to mainly concentrate at both ends of the well-barrier interface, and the recombination probability of the two is low, which seriously limits the luminous efficiency of the light-emitting diode and the efficiency droop Serious effect
Chinese patent document CN103682981A proposes to design the well layer so that the In composition gradually changes from low to high or from high to low along the growth direction of the quantum well to compensate the polarization field and increase the coupling of holes and electrons. However, the entire well layer The composition of In is changing, and there are problems of wide half-maximum width of LED spectrum, difficult wavelength control and poor wavelength stability.

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Embodiment Construction

[0023] Preferred embodiments of the nitride-based light-emitting diode of the present invention will be described in more detail below with reference to the accompanying drawings.

[0024] Such as figure 1 As shown, a nitride-based light-emitting diode includes, from bottom to top:

[0025] (1) A substrate 100, the substrate is selected from sapphire (Al 2 o 3 ), SiC, Si or GaN, the preferred sapphire substrate in this embodiment;

[0026] (2) A buffer layer 101, the buffer layer is grown on the substrate 100 that has undergone high temperature treatment, and is a gallium nitride (GaN) and / or aluminum nitride (AlN) layer, and the growth temperature is 400~600°C , the film thickness is 5nm~50nm;

[0027] (3) An N-type GaN layer 102, the N-type GaN layer is grown on the buffer layer 101, the growth temperature is 1000-1200°C, the film thickness is 100 nm-1000 nm, and the doping concentration is 1×10 18 ~1×10 20 cm -3 , preferably 1 x 10 19 cm -3 , the dopant source is...

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Abstract

The invention discloses a nitride-based light emitting diode. The nitride-based light emitting diode sequentially comprises a substrate, a buffer layer, an N type nitride layer, an (InxGa1-xN / GaN)nMQW light emitting layer and a P type nitride layer. At least one gradual change InN layer is inserted into an InxGa1-xN well layer of an MQW structure. The polarization field of the quantum well can be effectively weakened through insertion of the gradual change InN layer into the well layer, an energy band of the quantum well becomes smooth from inclination, accordingly, injection and diffusion of carriers in the well layer are enhanced, the composite probability of electrons and cavities is increased, the internal quantum efficiency is improved, and finally, the light emitting efficiency of the light emitting diode is improved, the efficiencydroop effect is reduced, and the spectrum half width, wavelength control and wavelength stability of an LED cannot be affected.

Description

technical field [0001] The invention relates to a semiconductor optoelectronic device, in particular to a nitride-based light-emitting diode. Background technique [0002] With the application of LED more and more widely, it is imperative to further improve the luminous efficiency and reduce the efficiency droop effect. Traditional nitride-based light-emitting diodes (In x Ga 1-x N / GaN) n In the MQW structure, due to the existence of the polarization field, the energy band of the quantum well becomes inclined, causing electrons and holes to mainly concentrate at both ends of the well-barrier interface, and the recombination probability of the two is low, which seriously limits the luminous efficiency of the light-emitting diode and the efficiency droop The effect is serious. Chinese patent document CN103682981A proposes to design the well layer so that the In composition gradually changes from low to high or from high to low along the growth direction of the quantum wel...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/14H01L33/32
CPCH01L33/06H01L33/32
Inventor 董木森申利莹王笃祥王良均
Owner TIANJIN SANAN OPTOELECTRONICS
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