The invention discloses a nitride-based light emitting diode. The nitride-based light emitting diode sequentially comprises a substrate, a buffer layer, an N type nitride layer, an (InxGa1-xN/GaN)nMQW light emitting layer and a P type nitride layer. At least one gradual change InN layer is inserted into an InxGa1-xN well layer of an MQW structure. The polarization field of the quantum well can be effectively weakened through insertion of the gradual change InN layer into the well layer, an energy band of the quantum well becomes smooth from inclination, accordingly, injection and diffusion of carriers in the well layer are enhanced, the composite probability of electrons and cavities is increased, the internal quantum efficiency is improved, and finally, the light emitting efficiency of the light emitting diode is improved, the efficiencydroop effect is reduced, and the spectrum half width, wavelength control and wavelength stability of an LED cannot be affected.