Nitride-based light emitting diode

Abstract

The invention discloses a nitride-based light emitting diode. The nitride-based light emitting diode sequentially comprises a substrate, a buffer layer, an N type nitride layer, an (InxGa1-xN/GaN)nMQW light emitting layer and a P type nitride layer. At least one gradual change InN layer is inserted into an InxGa1-xN well layer of an MQW structure. The polarization field of the quantum well can be effectively weakened through insertion of the gradual change InN layer into the well layer, an energy band of the quantum well becomes smooth from inclination, accordingly, injection and diffusion of carriers in the well layer are enhanced, the composite probability of electrons and cavities is increased, the internal quantum efficiency is improved, and finally, the light emitting efficiency of the light emitting diode is improved, the efficiencydroop effect is reduced, and the spectrum half width, wavelength control and wavelength stability of an LED cannot be affected.

Description

technical field [0001] The invention relates to a semiconductor photoelectric device, in particular to a nitride-based light-emitting diode. Background technique [0002] With the application of LEDs more and more widely, it is imperative to further improve the luminous efficiency and reduce the efficiency droop effect. Traditional nitride-based light-emitting diodes (In x Ga 1-x N / GaN) n In the MQW structure, due to the existence of the polarization field, the energy band of the quantum well becomes inclined, causing electrons and holes to mainly concentrate at both ends of the well-barrier interface, and the recombination probability of the two is low, which seriously limits the luminous efficiency of the light-emitting diode and the efficiency droop The effect is serious. Chinese patent document CN103682981A proposes to design the well layer so that the In composition gradually changes from low to high or from high to low along the growth direction of the quantum wel...

AI Technical Summary

Problems solved by technology

Traditional nitride-based light-emitting diodes (In x Ga 1-x N / GaN) n In the MQW structure, due to the existence of the polarization field, the energy band of the quantum well becomes inclined, causing electrons and holes to mainly concentrate at both ends of the well-barrier interface, and the recombination probability of the two is low, which seriously limits the luminous efficiency of the light-emitting diode and the efficiency droop Serious effect

Chinese patent document CN103682981A proposes to design the well layer so that the In composition gradually changes from low to high or from high to low along the growth direction of the quantum well to compensate the polarization field and increase the coupling of holes and electrons. However, the entire well layer The composition of In is changing, and there are problems of wide half-maximum width of LED spectrum, difficult wavelength control and poor wavelength stability.

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