High temperature pressure sensor process based on heavily doped 4h-sic substrate

Abstract

The invention discloses a high temperature pressure sensor technology based on a heavy doping 4H-SiC substrate, especially relates to the manufacture method of a novel wide bandgap semiconductor electronic device with high temperature and high voltage resistance, high sensitivity and stable output signal, and belongs to the field of wide bandgap semiconductor device preparation technology. The technology comprises the steps of preparing a heavy doping 4H-SiC substrate, preparing a piezoresistive strip, preparing a seed layer, preparing a mask layer, preparing an induced membrane, preparing a SiO2 diffusion barrier layer, preparing a contact window, preparing an AlN insulation layer, preparing an electrode, preparing ohmic contact, and preparing a protective layer and a lead layer. According to the technology, the p type and n type SiC epitaxial layer with epitaxial high doping concentration of equipment such as CVD are not used, the semiconductor process is reduced, the rate of finished products is raised, and the production cost is reduced. The silicon carbide high temperature pressure sensor prepared by the invention can satisfy the demanding requirements of a sensor in harsh environments of high temperature, high pressure and high radiation.

Description

technical field [0001] The invention relates to the technical field of preparation of wide bandgap semiconductor devices, in particular to a manufacturing technology of a novel wide bandgap semiconductor electronic device with high temperature and high pressure resistance, high sensitivity and stable output signal. Background technique [0002] Sensors are components and devices that convert non-electricity into electric quantity measurement. In 1856, Lord Kelvin first discovered the piezoresistive effect, which is a widely used sensor principle. Simply put, when a resistor is strained and deformed, its resistance value changes. This effect provides a simple and direct energy and signal conversion mechanism between mechanical energy and electrical energy. In 1954, C.S. Smith of Bell Laboratories studied the piezoresistive effect of silicon in detail and first obtained the patent authorization for semiconductor piezoresistivity. In the late 1950s, Kulite Semiconductor intr...

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Problems solved by technology

my country's pressure sensors have been greatly improved in the 1990s, but compared with foreign sensors, there is still a big gap in the level of scientific research and production technology, and the output is low, the variety is not complete, and it has not yet been fully serialized and standardized, which cannot fully meet the needs of customers. Domestic market demand, especially in high temperature and high pressure working environment

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