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A screening test method for flash memory reliability

A test method and reliability technology, applied in the field of flash memory reliability screening test, can solve problems that do not involve flash memory chips

Active Publication Date: 2018-05-01
WUHAN XINXIN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] The above-mentioned patent involves a reliability testing method for semiconductor devices, but does not involve the technical characteristics of finding flash memory chip defects by applying voltage stress between the gate and drain

Method used

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  • A screening test method for flash memory reliability
  • A screening test method for flash memory reliability
  • A screening test method for flash memory reliability

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Embodiment Construction

[0032] The present invention provides a screening test method for improving the reliability of NOR-type flash chips. The method is to add a stress test process to the existing flash memory test process. First, several flash memory chips to be tested are provided, such as image 3 As shown, the flash memory chip to be tested is a p-type substrate 1, and then the substrate 1 is covered with an insulating oxide layer, a floating gate, an insulating layer and a control gate in sequence, and spacers 3 are formed on both sides of the gate.

[0033] Then on these flash memory chips to be tested (such as Figure 4 As shown) Write 0 to all address units of the array of these flash memory chips, read all address units, and judge whether the content of all address units is 0, if yes, enter the test mode, if not, it means that there is a problem with the flash memory chip , output an error message at this time, and screen out the faulty flash memory chip.

[0034] Enter the test mode, pr...

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Abstract

The invention relates to the field of semiconductor defect detection, in particular to a screening test method for improving the reliability of NOR flash memory chips. By adding a voltage stress test on the basis of the original flash memory chip test, first write all address units of the flash memory chip to be tested Enter 0 and confirm that all are 0, then provide a negative high voltage to the gate of the flash memory chip, and a positive high voltage to the drain, so that the voltage difference between the two ends is above 10V and keep it for a safe period of time to perform an erase operation to screen out the stress test Faulty flash memory chip, which can improve the reliability of the product.

Description

technical field [0001] The invention relates to the field of semiconductor defect detection, in particular to a method for screening and testing flash memory reliability. Background technique [0002] In the field of integrated circuit manufacturing, with the continuous reduction of the feature size of integrated circuits and the continuous improvement of chip integration, traditional production models, process materials, device models, and testing methods are facing many challenges. [0003] Flash memory (Flash Memory) is a common semiconductor integrated circuit, which is widely used in storage devices in mobile phones, industrial equipment, telecommunications equipment, and mobile memory cards. Unlike general random access memory, flash memory is characterized by non-volatile . Because flash memory is generally used to store the working program of the device and related very important data, it is extremely important for the electronic products that cooperate with it. Th...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/08
Inventor 张宇飞龚斌罗旖旎谢振张佐兵
Owner WUHAN XINXIN SEMICON MFG CO LTD