Power semiconductor device and method of manufacturing same

Abstract

There is provided a power semiconductor device including: a first semiconductor region of a first conductivity type; second semiconductor regions formed in the first semiconductor region and being of a second conductivity type; a well region formed above the second semiconductor regions and being of the second conductivity type; and a source region formed in the well region and being of the first conductivity type, wherein the second semiconductor regions include 1 to n layers formed from a lower portion of the device extending a in a direction of height of the device, and in the case that the widest width of the of the second semiconductor region of the nth layer is Pn, P1<Pn (n≧2).

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2013-0094957 filed with the Korean Intellectual Property Office on Aug. 9, 2013, the entire disclosure of which is incorporated herein by reference. technical field [0003] The present technology relates to power semiconductor devices and methods of manufacturing the same. Background technique [0004] In general, power semiconductor devices are widely used to control motors or as elements of various switching devices such as inverters. [0005] In detail, a power semiconductor device (semiconductor device used in a power supply device) is a core component of a power supply device that optimally converts or controls power. [0006] Power semiconductor devices have higher breakdown voltages, higher current levels, and higher frequencies than ordinary semiconductor devices. [0007] As typical power semiconductor devices, there are Metal Oxide Sem...

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Problems solved by technology

However, Patent Document 1 does not disclose the feature that the width and concentration of the second conductivity type pillars each change in the longitudinal direction or the height direction of the device.

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