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Analyzing method of repeating defect

A technology of repetitive defects and analysis methods, applied in the field of semiconductor manufacturing, can solve problems such as the inability to directly and effectively trace repetitive defects, and achieve the effect of avoiding losses

Active Publication Date: 2015-03-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for analyzing repetitive defects, so as to solve the situation that the causes of repetitive defects cannot be traced directly and effectively in the prior art

Method used

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Embodiment Construction

[0033] The analysis method of repetitive defects of the present invention will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0034] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing...

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Abstract

The invention discloses an analyzing method of a repeating defect. The analyzing method of the repeating defect comprises the steps of front-end analysis is carried out to lock suspicious reticles; wafers for an experiment are provided and the wafers are divided into a first set and a second set; the first set of wafers are shot according to an original shot procedure to obtain a first graph; the second set of wafers are shot according to a corrected shot procedure to obtain a second graph; the first graph is compared with the second graph to determine the reticles causing the repeating defect.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an analysis method for repetitive defects. Background technique [0002] Usually, the semiconductor manufacturing system is divided into four parts: wafer manufacturing (Wafer Fab, also called front-end process), wafer inspection (Wafer Probe), packaging and final testing. Among them, the production line of wafer manufacturing is the most core and complex manufacturing system in the entire semiconductor manufacturing, especially the photolithography process is an important factor restricting product quality. [0003] In the semiconductor wafer manufacturing process, each wafer generally goes through a dozen to dozens of layers of exposure process. Each exposure process adopts the repeated exposure method, that is, the reticle is aligned with a certain area of ​​the wafer, one exposure forms an exposure unit (shot), and then moves to the next position, and then exposes,...

Claims

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/20
Inventor 高燕董天化朱赛亚曾红林
Owner SEMICON MFG INT (SHANGHAI) CORP