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Array substrate, manufacturing method of array substrate and display device

A technology of an array substrate and a manufacturing method, which is applied in the display field, can solve problems such as the reduction of luminance of OLED display panels, and achieve the effects of improving display effects and reducing unevenness

Inactive Publication Date: 2015-03-25
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an array substrate and its manufacturing method, and a display device. A thin-film transistor with a large aspect ratio is designed in the voltage drop direction of the drive tube to increase the driving current in the saturation region, which can solve the problem of Vdd of the drive tube. The problem of the reduction of the brightness of the OLED display panel caused by the reduction

Method used

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  • Array substrate, manufacturing method of array substrate and display device
  • Array substrate, manufacturing method of array substrate and display device

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Embodiment 1

[0037] This embodiment provides an array substrate, including a plurality of scanning lines and a plurality of data lines formed on the substrate, the plurality of scanning lines and the plurality of data lines are interlaced to define a plurality of pixel units and A thin film transistor is formed in the pixel unit, wherein, in the direction from close to the scan line voltage source to away from the scan line voltage source, the channel width-to-length ratio of the N+M thin film transistor is greater than the channel width of the Nth thin film transistor Length ratio, N and M are both integers greater than 1.

[0038] The magnitude of the charging current of the thin film transistor is proportional to the channel width-to-length ratio W / L of the thin-film transistor charging channel, W represents the channel width, and L represents the channel length. Therefore, the channel width-to-length ratio of the thin film transistor can be increased To increase the charging current of...

Embodiment 2

[0045] An embodiment of the present invention further provides a display device, including the above-mentioned array substrate. The structure and working principle of the array substrate are the same as those of the above-mentioned embodiment, and are not repeated here. In addition, the structures of other parts of the display device may refer to the prior art, which will not be described in detail herein. The display device can be: liquid crystal panel, OLED panel, electronic paper, liquid crystal TV, liquid crystal display, digital photo frame, mobile phone, tablet computer and other products or components with any display function.

Embodiment 3

[0047] This embodiment also provides a method for fabricating an array substrate, including forming a plurality of scan lines and a plurality of data lines on the substrate, and the plurality of scan lines and the plurality of data lines are interlaced to define a plurality of pixel units , and a thin film transistor is formed in the pixel unit, wherein, from the direction close to the scan line voltage source to the direction away from the scan line voltage source, a channel width to length ratio greater than that of the Nth thin film transistor is formed. N+M thin film transistors.

[0048] The size of the charging current of the thin film transistor is proportional to the channel width to length ratio W / L of the charging channel of the thin film transistor, W represents the channel width, and L represents the channel length. Therefore, the channel width to length ratio of the thin film transistor can be increased by increasing to increase the charging current of the thin fi...

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Abstract

The invention provides an array substrate, a manufacturing method of the array substrate and a display device, and belongs to the technical field of display. The array substrate comprises multiple scanning lines formed on the substrate and multiple data lines formed on the substrate. The multiple scanning lines and the multiple data lines are staggered to define multiple pixel units, and thin film transistors are arranged in the pixel units. In the direction from the position close to a scanning line voltage source to a position far away from the scanning line voltage source, the width to length ratio of a channel of the N+M thin film transistor is larger than that of a channel of the N thin film transistor, and N and M are both integers larger than 1. According to the technical scheme, the thin film transistors with a larger width to length ratio are arranged in the voltage drop direction of a drive pipe to increase saturation region drive current, and the problem that Vdd of the drive pipe is reduced, so that the luminance brightness of an OLED display panel is lowered can be solved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] With the development of flat panel display technology, flat panel display devices are developing towards large size, high resolution and low cost. As the size of the display panel increases, the impact of the impedance effect becomes greater. [0003] To solve this problem, low-resistance materials such as Cu metal are introduced to reduce the wiring resistance. However, for OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode) display panels, even if Cu metal is used to make wiring, such as figure 1 As shown, the Vdd line used to transmit the Vdd voltage still has impedance, so there is still the problem that the Vdd of the driving tube is continuously attenuated due to the line impedance. However, due to the existence of SD (source electrode and drain e...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L29/10H01L29/786H01L21/84H01L21/336H01L27/32
Inventor 刘晓娣盖翠丽王刚
Owner BOE TECH GRP CO LTD
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