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Semiconductor Device

A semiconductor, conductive type technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of increasing feedback capacitance Crss, and achieve the effect of reducing feedback capacitance and low-cost manufacturing

Active Publication Date: 2015-03-25
SANKEN ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in an IGBT with a structure in which the groove width is widened, there is a problem that the feedback capacitance Crss increases

Method used

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Examples

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Effect test

no. 1 approach

[0072] Hereinafter, a semiconductor device according to a first embodiment of the present invention will be described. This semiconductor device is a trench-gate power MOSFET in which a channel is controlled to be on and off by a gate voltage to perform current switching control. The gates are formed in grooves 25 formed parallel to the front surface of the semiconductor substrate, and the respective gates are connected in parallel. Each gate electrode is formed inside the groove 25 after an insulating film is formed on the surface in the groove 25 .

[0073] figure 1 is a cross-sectional view showing the structure of the semiconductor device 1 . The semiconductor device 1 is a trench gate element having a structure in which a gate is formed in a groove 25 formed in a semiconductor substrate 100 . figure 1 In this semiconductor substrate 100, an n-layer 22 and a p-layer 30 are sequentially formed on an n+ layer 21 serving as a drain layer. On the front side of the semico...

no. 2 approach

[0110] Among the above structures, in the case of an IGBT having a groove 25 having a width of 3 to 20 μm, since holes are accumulated at the bottom of the groove 25, the on-state voltage can be reduced, which is particularly preferable. In addition, since the number of gates can be reduced, the feedback capacitance Crss can be further reduced.

[0111] In the semiconductor device 1 of the second embodiment of the present invention, as Figure 7 As shown, the semiconductor substrate 100 has: a first semiconductor region 10 of a first conductivity type; a second semiconductor region 20 of a second conductivity type disposed on the first semiconductor region 10; a first semiconductor region disposed on the second semiconductor region 20 the third semiconductor region 30 of conductivity type; and the fourth semiconductor region 40 of the second conductivity type arranged separately from each other on the third semiconductor region 30 .

[0112] Such as Figure 7 As shown, a gro...

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PUM

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Abstract

The invention provides a semiconductor device which is a trench gate type semiconductor device. The production cost is reduced and the feedback capacitance is reduced as well. A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on a region of the insulation film on a side surface of the recess; a first main electrode connected to the first semiconductor region; a second main electrode connected to the fourth semiconductor region; and a bottom electrode, which is arranged on the insulation film and is electrically connected to the second main electrode, and a length of the recess in an extension direction thereof is equal to or larger than a width of the recess, and the width of the recess is wider than an interval between the adjacent recesses.

Description

technical field [0001] The present invention relates to the structure of a trench gate type semiconductor device performing a switching operation. Background technique [0002] A power MOSFET, an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor: IGBT), or the like is used as a switching element (power semiconductor element) that performs a switching operation of a large current. As such a switching element, a trench gate type switching element is used in which an insulating film and a gate are formed in a groove (trench) formed in a semiconductor substrate. The width of a groove in an IGBT is usually set to about 1 μm or less (for example, refer to Patent Document 1). [0003] Image 6 It is a cross-sectional view showing an example of the structure of such a trench gate semiconductor device 110 . Image 6 In the semiconductor substrate 180, an n-layer 182 and a p-layer 183 are sequentially formed on an n+ layer 181 serving as a drain layer. On the fron...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78
CPCH01L29/401H01L29/41708H01L29/41741H01L29/4236H01L29/7397H01L29/7813H01L29/0696H01L29/407H01L29/42376H01L29/4238H01L29/7811
Inventor 川尻智司鸟居克行
Owner SANKEN ELECTRIC CO LTD