Phase-change memory and method for manufacturing same

一种相变存储器、相变层的技术，应用在电气元件等方向，能够解决工艺成本高、相变存储器工艺步骤复杂等问题，达到节约工艺步骤、接触面积减小、提高加热效率的效果

Active Publication Date: 2015-04-15
SEMICON MFG INT (SHANGHAI) CORP
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, a smaller bottom contact electrode is generally added between the lower electrode of the phase change memory and the phase change layer to improve the efficiency of the phase change memory, but the existing process steps for forming the phase change memory are relatively complicated, and the process cost higher

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase-change memory and method for manufacturing same
  • Phase-change memory and method for manufacturing same
  • Phase-change memory and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] As mentioned in the background art, the existing process steps for forming a phase change memory are relatively complicated and costly.

[0032] Please refer to figure 1 , is a schematic structural diagram of a phase change memory.

[0033] The method for forming the phase change memory includes: providing a substrate 10; forming a peripheral metal interconnect structure 20 and a bottom electrode 30 in the substrate 10, the peripheral metal interconnect structure 20 including an interconnect metal layer 22 and an interconnect The bottom electrode 30 includes a bottom electrode metal layer 32 and a bottom electrode adhesive layer 31; a first mask layer 40 is formed on the surface of the substrate 10, and the first mask layer 40 includes a first mask layer 40. A silicon nitride layer 41 and a first silicon oxide layer 42; a first opening is formed in the first mask layer 40, and the first opening exposes part of the surface of the bottom electrode metal layer 32; A bott...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A phase change memory and its fabrication method are provided. A bottom electrode structure is provided through a substrate. A mask layer is formed on the substrate and the bottom electrode structure. A first opening is formed in the mask layer to expose the bottom electrode structure. A spacer is formed on sidewalls and bottom surface portions of the first opening to expose a surface portion of the bottom electrode structure. The first opening including the spacer therein has a bottom width less than a top width. A heating layer is formed at least on the surface portion of the bottom electrode structure exposed by the spacer. A phase change layer is formed on the heating layer to completely fill the first opening. A top electrode is formed on the phase change layer and the mask layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase-change memory and a forming method thereof. Background technique [0002] Phase Change Random Access Memory (PCRAM) technology is based on the idea that S.R. Ovshinsky proposed in the late 1960s that phase change films could be applied to phase change storage media. As an emerging non-volatile storage technology, phase change memory has great advantages over flash memory in many aspects such as read and write speed, read and write times, data retention time, unit area, and multi-value realization. It has become the focus of current research on non-volatile storage technology. [0003] In phase-change memory, the value of the memory can be changed by heat-treating the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or an amorphous state due to the heating effect of an applied el...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH01L45/06H01L45/144H01L45/1683H01L45/126H10N70/8413H10N70/231H10N70/8828H10N70/826H10N70/066
Inventor 李莹
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap