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LPCVD initial-deposition furnace temperature accurate control method

A precise control and initial deposition technology, applied in the field of LPCVD deposition, can solve the problems that the adjustment effect cannot be reflected in time, the disturbance cannot be detected in time, large overshoot or oscillation, etc., to achieve stable operation, avoid fluctuations in furnace temperature, and ensure consistency sexual effect

Active Publication Date: 2015-04-22
SHANGHAI MICRO SEMI WORLD
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Problems solved by technology

The temperature control process has a relatively typical nonlinear and hysteresis. Due to the hysteresis, the disturbance cannot be detected in time, and the adjustment effect cannot be reflected in time, resulting in large overshoot or oscillation; this makes the deposited film have certain defects, so there are It is necessary to improve the precise control of furnace temperature

Method used

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  • LPCVD initial-deposition furnace temperature accurate control method
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  • LPCVD initial-deposition furnace temperature accurate control method

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Embodiment Construction

[0013] Such as figure 1 Shown, the precise control method of the furnace temperature of LPCVD initial deposition of the present invention, comprises the steps:

[0014] S1. Measure the value and time of the furnace temperature fluctuation according to different butterfly valve opening angles, pumping speeds, and flow rates of different process gases, determine the subdivision series according to the control accuracy, and calculate different process gas flow rates and different The feedforward heating current value and feedforward time corresponding to the vacuum degree are shown in the table below:

[0015]

[0016]

[0017] S2. Input the four-dimensional mapping table composed of gas flow, vacuum degree, corresponding feedforward heating current value, and feedforward time into the computer;

[0018] S3. After setting the gas flow rate and vacuum degree according to the required process conditions during production, the computer controls the LPCVD furnace to perform fe...

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Abstract

The invention discloses an LPCVD initial-deposition furnace temperature accurate control method. When gas enters, According to the flow and the vacuum degree of the gas which enters, the lowering range of temperature and the time for a furnace body to be heated to constant temperature are predicted, feedforward feeding is carried out so that constant furnace temperature during gas entering can be guaranteed, fluctuation is avoided, LPCVD furnace temperature can be controlled in real time, LPCVD furnace temperature is controlled stably, furnace temperature fluctuation is avoided, stable operation of an LPCVD furnace is achieved, and accordingly the consistency of an LPCVD initial-deposition film is guaranteed.

Description

technical field [0001] The invention belongs to the technical field of LPCVD deposition, in particular to a furnace temperature control method for initial deposition of an LPCVD deposition furnace. Background technique [0002] With the development of microelectronics technology and the improvement of production level, surface states such as PN junctions of semiconductor discrete power devices are obtained by LPCVD, and the quality of films deposited by LPCVD is very important. The composition, composition ratio and uniformity of the film properties affect the final parameters of the product, so obtaining a high-quality film becomes the primary choice, so this highlights a higher requirement for the furnace temperature of LPCVD, and the key index of the LPCVD electric heating furnace is the constant furnace temperature. When it enters, the furnace temperature will drop, causing the initial deposited film in contact with the PN junction to be unqualified; at present, a large ...

Claims

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Application Information

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IPC IPC(8): C23C16/52
CPCC23C16/52
Inventor 丁波李轶陈瀚侯金松
Owner SHANGHAI MICRO SEMI WORLD
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