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Array substrate and manufacturing method thereof, display panel, and display device

A technology for array substrates and base substrates, applied in the fields of display panels, display devices, array substrates and manufacturing methods thereof

Active Publication Date: 2017-05-10
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing excimer laser annealing process cannot achieve different degrees of crystallization of different types of thin film transistors on the same array substrate to form polysilicon with different grain sizes.

Method used

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  • Array substrate and manufacturing method thereof, display panel, and display device
  • Array substrate and manufacturing method thereof, display panel, and display device
  • Array substrate and manufacturing method thereof, display panel, and display device

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Embodiment Construction

[0045] The specific implementation manners of the array substrate and the manufacturing method thereof, the display panel, and the display device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0046] The shape and thickness of each film layer in the drawings do not reflect the real proportion of the array substrate, but are only intended to schematically illustrate the content of the present invention.

[0047] An array substrate provided by an embodiment of the present invention, such as figure 1 As shown, it includes: a base substrate 1 and a plurality of thin film transistors 2 located on the base substrate 1; the active layer in each thin film transistor 2 is a polysilicon film formed after an amorphous silicon film undergoes an excimer laser annealing process;

[0048] The base substrate 1 has a plurality of recesses 3 ( figure 1 Taking four depressions as an example), each depression ...

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PUM

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Abstract

The invention discloses an array substrate and a manufacturing method thereof, a display panel, and a display device. The base substrate of the array substrate or the buffer layer on the base substrate has a plurality of depressions; wherein, each depression has at least one slope , there is a thin film transistor on a slope of each depression; the depressions are divided into at least two types, and the included angles between the slopes with thin film transistors in different types of depressions and the horizontal plane of the substrate are different; thus, in In the production process of the active layer of the thin film transistor, when the amorphous silicon film in each recess is subjected to an excimer laser annealing process to melt the amorphous silicon and crystallize into polysilicon, the amorphous silicon film in different types of recesses The received laser energy is different, and the crystal grain size of the polysilicon thin film formed in different types of depressions is different, so that different types of thin film transistors on the same array substrate can be crystallized to different degrees by excimer laser annealing process.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a manufacturing method thereof, a display panel, and a display device. Background technique [0002] In a flat display panel such as a liquid crystal display panel (LCD, Liquid Crystal Display) or an organic electroluminescent display panel (OLED, Organic Light Emitting Diode), a thin film transistor (Thin Film Transistor, TFT) on an array substrate can be Used as a switching thin film transistor, it can also be used as a driving thin film transistor. [0003] In the above-mentioned flat panel display panel, there are different requirements on the characteristics of the switching thin film transistor and the driving thin film transistor. The switching thin film transistor needs to have a larger on-state current, so that it can ensure that the switching thin film transistor has a higher switching property; the driving thin film transistor needs to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77
CPCH01L21/02532H01L21/02686H01L27/1218H01L27/1222H01L27/1262H01L21/02592H01L21/02675H01L27/1288H01L29/6675H01L29/78672
Inventor 孙亮
Owner BOE TECH GRP CO LTD