Electromigration test method and structure
A technology of test structure and test method, which is applied in the direction of circuit, measuring circuit, measuring device, etc., can solve the problems of high cost, error and unfavorable measurement results, and achieve the effect of meeting test requirements and improving accuracy
Active Publication Date: 2017-08-25
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
When the technology node enters 20nm, the test current is as small as tens or even tens of μA, and the maximum accuracy of the equipment used to provide the test current is only a few μA. Therefore, when the requirements for the test current are high, the test current The equipment cannot meet the requirements, resulting in serious errors in the measurement results
If the equipment is replaced, more funds will be spent, which is not conducive to reducing production costs
Method used
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[0025] The electromigration test method and structure of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is shown, it should be understood that those skilled in the art can modify the present invention described here, and still realize the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0026] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. should be considered in
[0027] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages a...
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The present invention proposes an electromigration test method and structure, which includes a metal interconnection line to be detected, test terminals located at both ends of the metal interconnection line to be detected, a shunt unit connected in parallel with the metal interconnection line to be detected, and a shunt unit located between the shunt unit and the test terminal. The control diode between the terminals; using a shunt unit to take up a part of the current, so that the current on the metal interconnection line to be tested can obtain a current with high precision and a small value, so that the equipment providing the test current cannot reduce its own current minimum accuracy And in the case of only providing a relatively accurate and relatively large test current, after the accurate and large-value test current is shunted, the current applied to the metal interconnection line to be detected is a current with high precision and a small value, and then Meet the test requirements and improve the accuracy of the test.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an electromigration testing method and structure. Background technique [0002] In the field of semiconductor manufacturing, the electromigration of metal interconnection lines in the chip back-end process (BEOL) is an important parameter to measure the reliability of chips. Please refer to figure 1 , figure 1 It is a structural diagram of electromigration testing in the prior art, including: a metal interconnection line 10 to be tested, a first test terminal 21, a second test terminal 22, a third test terminal 23, a fourth test terminal 24 and connections to the test terminal Metal interconnection 10 and first test terminal 21, the second test terminal 22, the 3rd test terminal 23 and the through-hole connection 30 of the 4th test terminal 24; A test current, and the second test terminal 22 is grounded, and the resistance of the metal interconnection line 10 to be t...
Claims
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IPC IPC(8): H01L23/544G01R31/00
Inventor 冯军宏
Owner SEMICON MFG INT (SHANGHAI) CORP