Hall sensor device
A Hall sensor and equipment technology, applied in Hall effect devices, instruments, measuring magnetic variables, etc., can solve the problems of expensive layout and sensitivity of magnetic field sensors, and achieve the effect of reducing offset voltage
Active Publication Date: 2017-06-23
TDK MICRONAS GMBH +1
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- Application Information
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Problems solved by technology
It is desirable to improve the expensive placement and sensitivity of magnetic field sensors
Method used
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Embodiment Construction
[0023] figure 1 The figure in FIG. 2 shows a schematic plan view of an embodiment of a Hall sensor device 10 according to the invention with a first Hall sensor 20 and a second Hall sensor 30 in a first connection configuration.
[0024] The first Hall sensor 20 has a first Hall element 220, a second Hall element 240, a third Hall element 260 and a fourth Hall element 280, wherein the first Hall element 220 includes a first external The connecting contact 222 and the second central connecting contact 224 and the third outer connecting contact 226 , ie the second connecting contact 224 is directly adjacent to the first connecting contact 222 and the third connecting contact 226 . Furthermore, the second Hall element 240 comprises a first outer connection contact 242 and a second middle connection contact 244 and a third outer connection contact 246, ie the second connection contact 244 is directly adjacent to the first connection contact. point 242 and a third connecting conta...
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A Hall sensor device, which is formed on a semiconductor body, the Hall sensor device has a first Hall sensor and a second Hall sensor, wherein each of the two Hall sensors has at least four individual Hall elements, and the four Hall elements are connected in a series circuit, wherein each Hall element has three connection contacts arranged in a row, wherein the middle connection contacts are arranged directly adjacent to the between said two external connecting contacts, and said series circuit is formed by means of connecting together or connecting the corresponding external connecting contacts, wherein the start and end of said series circuit are short-circuited to each other, wherein, The Hall elements are respectively configured in semiconductor trough regions of the first conductivity type, wherein the semiconductor trough regions of the respective Hall elements are separated from each other, wherein the first Hall sensor and the second Hall sensor The sensors are connected in parallel in that central connecting contacts of the Hall elements of the first Hall sensor are each connected to central connecting contacts of the Hall elements of the second Hall sensor.
Description
technical field [0001] The invention relates to a Hall sensor device, which is formed on a semiconductor body, with a first Hall sensor and a second Hall sensor, wherein each Hall sensor has at least four individual Hall sensors. Hall elements, and the four Hall elements are connected in a series circuit, wherein each Hall element has three connection contacts arranged in a row, wherein the middle connection contacts are arranged directly adjacent to the between two external connection contacts, and the series circuit is formed by connecting the corresponding external connection contacts, wherein the beginning and end of the series circuit are short-circuited to each other, wherein the Hall element Each is formed in a semiconductor tub region of the first conductivity type, wherein the semiconductor tub regions of the individual Hall elements are separated from one another. Background technique [0002] A magnetic field sensor is known from DE 101 50 955 C1. The magnetic f...
Claims
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IPC IPC(8): H01L43/06G01R33/07H10N52/00H10N52/80
CPCG01R33/077G01R33/07
Inventor M·科尼尔斯C·桑德
Owner TDK MICRONAS GMBH