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Intelligent power module, power device and temperature detection circuit and method of power device

A technology for temperature detection circuits and power devices, which is applied in the direction of converting AC power input into DC power output, thermometers, and thermometers using electrical/magnetic components that are directly sensitive to heat, which can solve the problem of inability to detect instantaneous junction temperature changes of power devices and other problems to achieve the effect of real-time monitoring

Active Publication Date: 2015-05-06
GD MIDEA AIR-CONDITIONING EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, this method cannot detect instantaneous junction temperature changes of power devices

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  • Intelligent power module, power device and temperature detection circuit and method of power device
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  • Intelligent power module, power device and temperature detection circuit and method of power device

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Embodiment Construction

[0026] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0027] Commonly used power semiconductor devices, such as MOSFETs, IGBTs, etc., have two parts in their structure: (1) the withstand voltage area located on the edge of the chip to ensure that the device can withstand a certain withstand voltage when it is turned off; (2) the active area located inside the chip Source region, the active region is composed of many cells with the same structure, when the device is in the on state, each cell flows a certain current.

[0028] see figure 1 (a), figure 1 (b), figure 2 (a), figure 2 (b), image 3 with Figure 4 , ...

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Abstract

The invention provides an intelligent power module, a power device and a temperature detection circuit and method of the power device. The method includes the steps: forming a temperature detection unit at the edge of an active area of the power device, and leading out a first emitting electrode on the temperature detection unit; forming a first gate area on the active area, and leading out a first gate electrode on the first gate area; detecting leakage current of a collecting electrode and the first emitting electrode under the disconnection state; calculating the junction temperature of the power device according to change relationships of the leakage current and the temperature. The temperature detection unit and the active area share one collecting electrode, the temperature detection unit is integrated into the power device, a cellular of part of active area of the power device serves as the temperature detection unit, leakage current of the temperature detection unit under the disconnection state is detected, and the junction temperature of the power device can be monitored in real time by the aid of the change relationship of the leakage current along with the temperature.

Description

technical field [0001] The invention relates to temperature detection technology, in particular to a temperature detection circuit and method of an intelligent power module and a power device. Background technique [0002] The intelligent power module (Intelligent Power Module, IPM) can convert the DC voltage (current) into an AC voltage (current) with variable amplitude and frequency under the action of the control signal, and the output AC voltage is loaded on the motor to drive it. run. Due to the advantages of high integration and good reliability, intelligent power modules are widely used in frequency conversion speed regulation, electric traction and frequency conversion home appliances. A typical IPM module consists of power semiconductor devices (power devices), control and protection circuits. Power devices generally use Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) or Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) accordi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K1/14G01K7/01H02M7/00
Inventor 胡爱斌黄国超
Owner GD MIDEA AIR-CONDITIONING EQUIP CO LTD