GaN device junction temperature and thermal resistance monitoring circuit and method

Abstract

The invention discloses a GaN device junction temperature and thermal resistance monitoring circuit and method, and the circuit comprises a microprocessor which is used for controlling the switching on and switching off of a GaN device, collecting the drain current IDS of the GaN device, and calculating the junction temperature of the GaN device; the constant current source monitoring circuit is used for controlling the switch of the GaN device according to the signal of the microprocessor and providing constant gate current for the GaN device when the GaN device is switched on; the thermocouple is arranged on the tube shell of the GaN device and is used for measuring the shell temperature of the GaN device; and the voltage source is used for applying voltage to the GaN device between the drain electrode and the source electrode of the GaN device, so that the GaN device works in an active region. According to the GaN device junction temperature and thermal resistance monitoring circuit and method, under the condition that the GaN device junction temperature and thermal resistance monitoring circuit is not disassembled, the device junction temperature can be obtained, and meanwhile the GaN device thermal resistance can be conveniently and accurately monitored; the method is convenient and simple.

Description

technical field [0001] The invention relates to the technical field of GaN device monitoring, in particular to a GaN device junction temperature and thermal resistance monitoring circuit and method. Background technique [0002] Power electronic devices have high energy conversion efficiency and good controllability, and have been widely used in new energy power generation, transportation and traction, aerospace and other fields. Semiconductor devices are the core components of power electronic devices and also power electronic devices. Among the most vulnerable components, power semiconductor devices have a significant impact on the reliability of power electronic devices, so improving the reliability of power electronic devices can meet stricter safety and cost requirements. As a third-generation semiconductor material, GaN material has the advantages of large band gap, high breakdown electric field strength, high electron saturation drift speed, and high thermal conductiv...

AI Technical Summary

Problems solved by technology

Among them, infrared thermal imaging is the most commonly used method for non-electrical quantity monitoring, but this method is expensive to use, complicated instruments, and will cause irreversible damage to devices

At present, there are few electrical quantity monitoring for the junction temperature of GaN devices.

However, the traditional electrical quantity monitoring for the junction temperature of silicon-based devices has not been proved to be applicable to the junction temperature monitoring of GaN devices.

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