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Intelligent power module, power device and temperature detection circuit and method thereof

A temperature detection circuit and power device technology, which is applied in the direction of irreversible DC power input conversion to AC power output, circuits, electric solid state devices, etc., can solve the problems of inability to detect instantaneous junction temperature changes of power devices, and achieve real-time monitoring Effect

Active Publication Date: 2017-07-04
GD MIDEA AIR CONDITIONING EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, this method cannot detect instantaneous junction temperature changes of power devices

Method used

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  • Intelligent power module, power device and temperature detection circuit and method thereof
  • Intelligent power module, power device and temperature detection circuit and method thereof
  • Intelligent power module, power device and temperature detection circuit and method thereof

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Embodiment Construction

[0027] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0028] Commonly used power semiconductor devices, such as MOSFETs, IGBTs, etc., have two parts in their structure: (1) the withstand voltage area located on the edge of the chip to ensure that the device can withstand a certain withstand voltage when it is turned off; (2) the active area located inside the chip Source region, the active region is composed of many cells with the same structure, when the device is in the on state, each cell flows a certain current.

[0029] see figure 1 (a), figure 1 (b), figure 2 (a), figure 2 (b), image 3 and Figure 4 , t...

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Abstract

The invention provides a smart power module, a power device and a temperature detection circuit and method of the power device. The temperature detection method includes: forming a temperature detection unit at the edge of an active area of the power device and extracting a first emitter electrode from the temperature detection unit; forming a first gate region on the active area and extracting a first gate electrode on the first gate region, wherein the temperature detection unit and the active area share one collector; detecting conduction voltage drop between the first emitter electrode and the collector in the conducting state; calculating junction temperature of the power device according to the change relation of the conduction voltage drop and the temperature. The temperature detection unit is integrated in the power device, cells of one part of the active area of the power device serve as the temperature detection unit, and junction temperature of the power device can be monitored in real time by aid of the change relation between leak currents and conduction voltage drop of the temperature detection unit in the conduction state along with the temperature.

Description

technical field [0001] The invention relates to temperature detection technology, in particular to a temperature detection circuit and method of an intelligent power module and a power device. Background technique [0002] The intelligent power module (Intelligent Power Module, IPM) can convert the DC voltage (current) into an AC voltage (current) with variable amplitude and frequency under the action of the control signal, and the output AC voltage is loaded on the motor to drive it. run. Due to the advantages of high integration and good reliability, intelligent power modules are widely used in frequency conversion speed regulation, electric traction and frequency conversion home appliances. A typical IPM module consists of power semiconductor devices (power devices), control and protection circuits. Power devices generally use Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) or Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) accordi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/42H02M1/00H01L23/58G01R31/42
Inventor 胡爱斌黄国超
Owner GD MIDEA AIR CONDITIONING EQUIP CO LTD