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State observer-based detection method of open-circuit fault of IGBT (insulated gate bipolar transistor) of MMC (modular multilevel converter)

A modular multi-level, state observer technology, applied in the direction of measuring electricity, measuring electrical variables, instruments, etc., can solve problems such as not given

Active Publication Date: 2015-05-06
HARBIN INST OF TECH
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Problems solved by technology

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  • State observer-based detection method of open-circuit fault of IGBT (insulated gate bipolar transistor) of MMC (modular multilevel converter)
  • State observer-based detection method of open-circuit fault of IGBT (insulated gate bipolar transistor) of MMC (modular multilevel converter)
  • State observer-based detection method of open-circuit fault of IGBT (insulated gate bipolar transistor) of MMC (modular multilevel converter)

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specific example

[0044] combined with Figure 1~6 Specific embodiments of the present invention are described in detail, but the present invention is not limited by the specific examples:

[0045] The topology of the three-phase modular multilevel converter is as follows: figure 1 shown. Each phase is composed of upper and lower bridge arms, and each bridge arm is composed of several sub-modules stacked, such as figure 2 shown. consists of two IGBTs per submodule (S 1 with S 2 ) and a capacitor C, the open circuit fault of the sub-module may have S 1 Fault and S 2 Two cases of failure, such as image 3 shown. In the control block diagram of the open circuit fault detection method of the present invention, the specific steps are as follows:

[0046] (1) Separately detect the bridge arm current i of the upper and lower bridge arms of each phase u with i l , and calculate the output current i o and arm circulation i c :

[0047] i o = i u -i l

[0048] i ...

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Abstract

The invention relates to the field of fault detection of power electronic and flexible HVDC (high voltage direct current), discloses a state observer-based detection method of an open-circuit fault of an IGBT (insulated gate bipolar transistor) of an MMC (modular multilevel converter) and aims to quickly diagnose reason and position of the open-circuit fault of the IGBT of the MMC. The state observer-based detection method includes as an error of an estimation value and a test value of bridge arm circulation excesses a threshold value for the moment of DeltaT1, judging that the fault occurs; comparing estimation values and actual values of the bridge arm current and output current and judging the bridge arm which the fault occurs to and fault type; monitoring voltage of capacitors of submodules, and in case that the voltage of the capacitor of one submodule is higher than the voltage threshold value for the moment of DeltaT2, judging that the fault occurs to the corresponding IGBT of the submodule. In this way, the state observer is provided for the output current and circulation of the MMC, and the submodule which the fault occurs is accurately positioned.

Description

technical field [0001] The invention relates to the fields of power electronics technology and flexible direct current transmission fault detection, in particular to a method for detecting an open-circuit fault of a sub-module IGBT in a modular multilevel converter based on a state observer. Background technique [0002] Modular multilevel converter (MMC) has many advantages such as very high conversion efficiency, extremely low output voltage harmonic content, small filter volume, modular characteristics, and easy installation and maintenance. It has attracted widespread attention of people, making it very suitable for occasions such as flexible direct current transmission and other high-voltage and high-power electric energy conversion. [0003] The topology of a modular multilevel converter is formed by stacking several identical sub-module units, and the power elements in the sub-modules usually use insulated gate bipolar transistors (Insulated gate bipolar transistors, ...

Claims

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Application Information

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IPC IPC(8): G01R31/02
Inventor 徐殿国李彬彬张一博杨荣峰
Owner HARBIN INST OF TECH
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