State observer-based detection method of open-circuit fault of IGBT (insulated gate bipolar transistor) of MMC (modular multilevel converter)
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- HARBIN INST OF TECH
- Publication Date
- 2015-05-06
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Abstract
Description
technical field
[0001] The invention relates to the fields of power electronics technology and flexible direct current transmission fault detection, in particular to a method for detecting an open-circuit fault of a sub-module IGBT in a modular multilevel converter based on a state observer. Background technique
[0002] Modular multilevel converter (MMC) has many advantages such as very high conversion efficiency, extremely low output voltage harmonic content, small filter volume, modular characteristics, and easy installation and maintenance. It has attracted widespread attention of people, making it very suitable for occasions such as flexible direct current transmission and other high-voltage and high-power electric energy conversion.
[0003] The topology of a modular multilevel converter is formed by stacking several identical sub-module units, and the power elements in the sub-modules usually use insulated gate bipolar transistors (Insulated gate bipolar transistors, ...