Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

ROM read data internal clock pulse generation circuit and method

An internal clock and circuit generation technology, applied in read-only memory, information storage, static memory, etc., can solve the problems of rising ROM power consumption and slow ROM reading speed, reducing load size, reducing ROM power consumption and reducing ROM power consumption. The effect of read time

Active Publication Date: 2017-10-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual use, the Rom Code of many users does not allow the bit line to be fully loaded.
In this case, the too wide internal clock pulse will have a large time margin after successfully reading the data, and these time margins will bring the following two disadvantages: 1) ROM power consumption rises; 2) ROM reading speed slowing down

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ROM read data internal clock pulse generation circuit and method
  • ROM read data internal clock pulse generation circuit and method
  • ROM read data internal clock pulse generation circuit and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] Such as image 3 The above is a schematic diagram of the internal clock pulse generation circuit for ROM read data in the embodiment of the present invention; the internal clock pulse generation circuit for ROM read data in the embodiment of the present invention includes: a logic control circuit 1, a reference bit line 4 charge and discharge control circuit 2, and a sensitive amplifier circuit 3. The reference bitline is Reference bitline4;

[0032] The load of the reference bit line 4 is a changeable load 5, and the changeable load 5 is adjusted according to the maximum bit line load in the ROM circuit after the ROM data code is written into the ROM circuit.

[0033] The charge and discharge control circuit 2 of the reference bit line 4 is used to charge and discharge the reference bit line 4 and obtain a charge and discharge time, and the charge and discharge time is determined by the variable load 5 .

[0034] The internal clock pulse used to read the ROM circuit i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an ROM read data internal clock pulse generation circuit. The ROM read data internal clock pulse generation circuit comprises a logic control circuit, a reference bit charging / discharging control circuit, a sensitive amplification circuit and a reference bit, wherein a load of the reference bit is a changeable load; after the changeable load is written into an ROM circuit according to an ROM data code, a maximum bit load in the ROM circuit is adjusted; the reference bit charging / discharging control circuit is used for charging and discharging the reference bit to obtain charging and discharging time of the reference bit; and an internal clock pulse is generated by the sensitive amplification circuit and the logic control circuit, and the pulse width of the internal clock pulse guarantees that accurate reading is realized by sufficient time margin when data on the bit corresponding to the maximum bit load is read. The invention further discloses an ROM read data internal clock pulse generation method. The ROM power consumption and reading time can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a ROM read data internal clock pulse generation circuit; the invention also relates to a ROM read data internal clock pulse generation method. Background technique [0002] A read-only memory (Read-Only Memory, ROM) is a memory that can only read data. In the wafer manufacturing process, the ROM data code (Code) provided by the customer is usually manufactured in the ROM circuit with a special mask (Mask). The ROM Code here refers to the data that the customer needs to write into the ROM circuit. Code Once written, it cannot be changed. [0003] For ROM, general users are more concerned about the following parameters: 1) ROM area; 2) ROM power consumption; 3) ROM reading speed. [0004] When the same ROM is written into different ROM Codes, the load on the ROM bit line (Bit Line, BL) will also be different, and the load on the bit line is the writte...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C17/08
Inventor 潘炯杨光华
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products