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Puf authentication method based on error rate distribution of stt-ram storage unit

An authentication method and storage unit technology, applied in the field of information security, can solve the problems of environmental changes affecting stability, large extra circuit overhead, etc., to save hardware overhead, improve reliability, and speed up authentication.

Active Publication Date: 2017-12-29
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method needs to use sensors to collect the voltage of each node, the additional circuit overhead is large, and environmental changes will also affect stability

Method used

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  • Puf authentication method based on error rate distribution of stt-ram storage unit

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Embodiment Construction

[0037] Below in conjunction with accompanying drawing, further describe the present invention through embodiment, but do not limit the scope of the present invention in any way.

[0038]This embodiment is certified for one STT-RAM with a size of 1MB and 1T1J, and its working environment is specified as a voltage range of 0.9V-1.1V and a temperature range of 275K to 325K. Utilizing the physical unclonable authentication method based on the error rate distribution of STT-RAM storage units provided by the present invention, the authentication work in this embodiment is divided into three stages—preprocessing stage, registration stage, and verification stage.

[0039] A. In the preprocessing stage, perform the following operations:

[0040] A1. Under Error-Least-State and Error-Most-State respectively, for each odd address Addr, determine whether the units at Addr and Addr+1 constitute an EDP. The method of judging EDP is that in N rounds of RWR tests, the difference between the ...

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Abstract

The invention discloses a PUF (physically unclonable function) authentication method based on STT-RAM (spin-torque transfer RAM) storage unit error rate distribution. The physical un-clonable authentication method comprises a pretreatment stage, a registration stage and a verification stage, and comprises the following steps of firstly, recording the positions of all EDPs (error-rate differential pairs) in an STT-RAM array in the pretreatment stage; then inputting a plurality of positions of the EDPs at the registration stage, and outputting reference output by a chip circuit by utilizing the relative size of two unit error rates in the EDPs at the registration stage; reproducing the registration stage at the verification stage; and finally, verifying whether given equipment and equipment at the registration stage are the same according to the output at the verification stage and the registration stage, thereby authenticating the genuine and sham of the chip. With the method provided by the invention, the authentication problem of the equipment is solved at very small hardware cost and time cost, and the authentication reliability is improved.

Description

technical field [0001] The invention belongs to the field of information security and relates to a physical unclonable (PUF) authentication method, in particular to a physical unclonable authentication method based on the error rate distribution of STT-RAM storage units. Background technique [0002] Spin torque transfer random reader (STT-RAM) is a new type of non-volatile (Non-volatile) memory. STT-RAM is considered to be one of the future SRAM substitutes, with the advantages of high density, low static power consumption, and low memory access time. At the same time, physical unclonable technology (PUF) is being widely suggested for device authentication, and other non-volatile storage has been proposed for making PUF, but there are generally problems such as high hardware overhead or high latency. [0003] In 2011, Prabhu and others in the United States proposed to use NAND Flash for device authentication. They first extract the sensitivity of each bit in Flash to dist...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/02G11C16/06
Inventor 孙广宇张宪
Owner PEKING UNIV