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Method for doping semiconductor substrates

A semiconductor and substrate technology, applied in the field of doped semiconductor substrates

Inactive Publication Date: 2015-05-27
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Yet even here, the doping is only applied through a single coating stage, whereby individual tuning of the surface concentration and doping depth is not possible

Method used

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  • Method for doping semiconductor substrates
  • Method for doping semiconductor substrates
  • Method for doping semiconductor substrates

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Embodiment Construction

[0042] in figure 1 In, how to simultaneously change the concentration of dopants in a plurality of regions near the surface of the semiconductor substrate and the diffusion depth of the dopants in the semiconductor substrate is described with reference to the schematic diagram. By adding the dopant source (here POCl 3 ) Increase the gas flow, and the result is to simultaneously change the dopant concentration and the dopant diffusion depth in multiple regions near the surface. Therefore, according to the prior art, separate adjustment of these two parameters is impossible.

[0043] in figure 2 Here, the second coating stage according to the method according to the invention is shown with reference to the schematic diagram. As a result, it can be detected that the concentration of dopants in multiple regions close to the surface can be changed without changing the diffusion depth of the dopants.

[0044] in image 3 Here, the first coating stage of the method according to the inv...

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Abstract

The invention relates to a method for doping semiconductor substrates by means of a diffusion process, wherein in a first coating phase, at least one dopant source is deposited at least in some areas on a surface of a semiconductor substrate, then in a drive-in phase, at least one dopant diffuses into the semiconductor substrate, and in a second coating phase, the at least one dopant source is deposited again at least in some areas on the semiconductor substrate while at least one dopant simultaneously diffuses into the semiconductor substrate. In said method, the dopant concentration in the area near the surface can be set independently of the diffusion depth of the dopant. The invention further relates to semiconductor substrates doped in such a way.

Description

Technical field [0001] The present invention relates to a method for doping a semiconductor substrate by a diffusion process, wherein, in a first coating stage, at least one dopant source is deposited on the surface of the semiconductor substrate at least in a plurality of regions, and then In the drive-in stage, at least one dopant is diffused into the semiconductor substrate, and in the second coating stage, the at least one dopant source is again deposited on the semiconductor substrate at least in a plurality of regions. At the bottom, and at least one dopant is simultaneously diffused into the semiconductor substrate. In the case of this method, the concentration of the dopant in the area close to the surface is thus adjustable, independent of the depth of diffusion of the dopant. The invention also relates to a semiconductor substrate doped in this way. Background technique [0002] The doped region can take on many different tasks in the solar cell, and the phosphorous d...

Claims

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Application Information

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IPC IPC(8): H01L21/225H01L31/18
CPCH01L21/2252H01L31/1804Y02E10/547Y02P70/50
Inventor P·罗特哈特A·沃尔夫T·斯图费尔斯D·比罗
Owner FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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