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High aspect ratio structure analysis

一种高纵横比、一部分的技术，应用在分析材料、使用波/粒子辐射进行材料分析、仪器等方向，能够解决未如实地示出制造过程的结果、帘幕化等问题

Active Publication Date: 2015-06-03
FEI CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the depth of TSVs typically in the range of 50–300 nm, milling the cross-section of TSVs with an ion beam can lead to significant curtaining
[0008] The images do not faithfully show the results of the manufacturing process due to the use of ion beam milling to expose feature damage and artifacts

Method used

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Embodiment Construction

[0022] Embodiments of the invention reduce damage and artifacts in features exposed by ion beam milling. Embodiments are particularly useful for analyzing new 3D structures, such as 3D NAND structures, which include unfilled high aspect ratio holes. The process can be performed on samples in wafer form or on smaller samples such as individual integrated circuits.

[0023] One embodiment of the invention mills the sample at a non-perpendicular angle prior to depositing the protective layer, followed by vertical milling to expose cross-sections of high aspect structures for imaging. By adjusting the slanted step angle and position of the vertical milling, ROIs can be exposed at any desired depth in high aspect ratio structures.

[0024] By slanting the steps, for example, between about 30° to about 33.5° prior to depositing the protective layer, the curtain effect is reduced or eliminated because the material between the protective layer and the ROI is reduced and the depth of ...

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Abstract

Curtaining artifacts on high aspect ratio features are reduced by reducing the distance between a protective layer and feature of interest. For example, the ion beam can mill at an angle to the work piece surface to create a sloped surface. A protective layer is deposited onto the sloped surface, and the ion beam mills through the protective layer to expose the feature of interest for analysis. The sloped mill positions the protective layer close to the feature of interest to reduce curtaining.

Description

technical field [0001] The present invention relates to charged particle beam processing of structures. Background technique [0002] A common method for examining microscopic (including nanoscale) structures for process monitoring and failure analysis is to cut trenches in the structure with a focused ion beam (FIB) to expose cross-sections, and then use a scanning electron microscope (SEM) to View cross section. However, ion beam milling artifacts can distort the exposed cross section such that the electron beam image does not show an accurate picture of the structure. [0003] One artifact is called "curtaining" because it can look like a curtain. Curtaining occurs when different materials are removed at different rates, such as when a sample includes material that is milled by the ion beam at different rates. Curtaining can also occur when milling surfaces with irregular shapes. [0004] Severe artifacts can be produced when exposing features that have a height much ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/00B23K15/08G01B15/00
CPCH01J37/3056H01J37/28H01J37/3178H01J2237/31749G01N1/32H01J2237/31745C23C14/46H01J37/3053H01J2237/3174
Inventor S.H.李S.斯通J.布莱克伍德M.施米德特
Owner FEI CO