A kind of epitaxial structure of light-emitting diode and its manufacturing method
A technology of light-emitting diodes and epitaxial structures, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve the problems of low LED lumen efficiency
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Embodiment 1
[0037] The schematic diagram of the epitaxial structure of the light-emitting diode proposed in this embodiment is shown in the attachment figure 1 . by figure 1 It can be seen that the epitaxial structure of the light emitting diode includes: the bottom layer is the substrate 101, and the substrate material is sapphire; the AlN buffer layer 102 on the substrate 101; the first conductivity type semiconductor layer is sequentially arranged on the AlN buffer layer 102 , Light-emitting layer multiple quantum well structure and second conductivity type semiconductor layer, where the first conductivity type semiconductor layer is an N type semiconductor layer, the second conductivity type semiconductor layer is a P type semiconductor layer, and the material of the N type semiconductor layer can be N type AlN, GaN, Al x Ga 1-x N, Al x In 1-x N, In y Ga 1-y N or (Al x Ga 1-x ) 1-y In y Single-layer or multi-layer structure such as N, where 0 x Ga 1-x N, Al x In 1-x N, In y Ga 1-y N or ...
Embodiment 2
[0057] Such as Figure 4 As shown, the difference from embodiment 1 is that embodiment 1 first fills the surface of the nano-scale pits with a nano-scale layered Al metal reflective layer 104b, and then epitaxially grows quantum on the surface of the nano-scale metal reflective layer 104b. The dot 104c serves as a quantum well layer; and in this embodiment, the quantum dot 104c is filled in the nano-scale pit as a quantum well layer, and then a nano-scale Al metal reflective layer 104b is formed on the surface of the quantum dot 104c. The reflective layer 104b can increase the reflectivity of the light emitted by the multi-quantum well structure of the light-emitting layer and increase the light extraction efficiency. The epitaxial structure of the light-emitting diode prepared in this way is suitable for front-mounted light-emitting diodes, and also suitable for vertical light-emitting diodes and flip-chip light-emitting diodes. diode.
Embodiment 3
[0059] Such as Figure 5 As shown, the difference from Embodiment 2 is that the nano-scale Al metal reflective layer 104b in Embodiment 2 is layered, while the nano-scale Al metal reflective layer 104b formed in this embodiment is scattered dots. Further, the scattered metal reflective layer is formed by the following process conditions:
[0060] After the layered Al metal reflective layer is formed, the temperature is increased to 1000~1100℃, preferably 1100℃, and H 2 , Thereby corroding the layered Al metal reflective layer into scattered dots (nano-particles), playing the role of mirrors and forming surface plasmon.
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