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Semiconductor resistor structure and method of forming the same

A resistor structure and semiconductor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of small layout area, unstable resistance value, large layout area, etc., and achieve a wide adjustment range , strong usability effect

Active Publication Date: 2017-12-26
HANGZHOU SILAN INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the advantage of single crystal resistors is that the resistance value is stable, and the disadvantage is that the layout area is large; the advantage of polycrystalline resistors is that the layout area is small, and the disadvantage is that the resistance value is unstable.

Method used

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  • Semiconductor resistor structure and method of forming the same
  • Semiconductor resistor structure and method of forming the same
  • Semiconductor resistor structure and method of forming the same

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Embodiment Construction

[0079] The present invention will be further described below in conjunction with specific embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0080] refer to figure 1 , The method for forming a semiconductor resistance structure according to this embodiment may include the following steps:

[0081] Step S11, providing a substrate;

[0082] Step S12, forming a well region of the first doping type in the substrate;

[0083] Step S13, forming a gate dielectric layer, the gate dielectric layer is at least partially located on the well region;

[0084] Step S14, forming a gate, the gate is at least partially located on the gate dielectric layer;

[0085] Step S15, forming a resistor body of a second doping type in the well region, at least a part of the resistor body is located under the gate and separated by the gate dielectric layer, and the second doping type and The first doping type is opposite.

[0086...

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Abstract

The present invention provides a semiconductor resistance structure and a forming method thereof, the structure comprising: a substrate; a well region of a first doping type formed in the substrate; a gate dielectric layer at least partially located on the well region; The gate is at least partly located on the gate dielectric layer; the second doping type resistor is formed in the well region, at least a part of the resistor is located under the gate and formed by the gate dielectric layer spaced apart, the second doping type is opposite to the first doping type. The semiconductor resistor structure of the present invention combines the advantages of single crystal resistors and polycrystalline resistors, avoids the disadvantages of both, and has the feature of adjustable resistance value.

Description

technical field [0001] The invention relates to a semiconductor resistor, in particular to a semiconductor resistor structure with adjustable resistance value and a forming method thereof. Background technique [0002] In the integrated circuit manufacturing industry, there are two main structures of semiconductor resistors, one is single crystal resistors and the other is polycrystalline resistors. Correspondingly, there are two manufacturing methods. Among them, the advantage of single crystal resistors is that the resistance value is stable, and the disadvantage is that the layout area is large; the advantage of polycrystalline resistors is that the layout area is small, and the disadvantage is that the resistance value is unstable. [0003] Therefore, a new semiconductor resistor is needed to combine the advantages of single crystal resistors and polycrystalline resistors and avoid the disadvantages of both. Contents of the invention [0004] The problem to be solved ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L21/02
Inventor 陈洪雷闻永祥王昊苏兰娟
Owner HANGZHOU SILAN INTEGRATED CIRCUIT
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