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Parameter extraction method for bipolar transistors

A bipolar transistor, parameter extraction technology, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., to achieve the effect of accurate simulation

Active Publication Date: 2015-07-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional HSPICE simulation program based on the Gummel Poon model cannot truly reflect the parameter distribution of bipolar transistors. Therefore, when simulating bipolar transistors, it is necessary to establish a set of field effect transistor parameter distributions that combine forward and reverse variation propagation. Statistical simulation model to accurately reflect the parameter distribution of the model in the manufacturing process, making the simulation closer to reality

Method used

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  • Parameter extraction method for bipolar transistors
  • Parameter extraction method for bipolar transistors

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Embodiment Construction

[0021] A method for extracting parameters of a bipolar transistor according to the present invention, now enumerates an embodiment and is specifically described as follows:

[0022] The first step is to collect the four kinds of V be I at bias voltage C Current values, collected at least a thousand per group, for each group of V be I at bias voltage C The current value is statistically distributed as a normal distribution, and the statistics of 3 I C Standard deviation distribution values.

[0023] In the second step, according to the statistical data obtained in the first step, the device parameters in the Gummel Poon model of SPICE need to be corrected:

[0024] First, assume that the parameter P of a bipolar transistor device is a function determined by process parameters such as q1, q2,..., qn, ie: p=f(q 1 ,q 2 ,q 3 ,...,q n );

[0025] If there is a slight difference in each process parameter between two identical devices, the error σ expression of the parameter ...

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Abstract

The invention discloses a parameter extraction method for bipolar transistors. Actual electrical characteristic parameter statistical distribution results of devices of production line supervised mass-production products are acquired positively and combined with reverse distribution deduction extraction results of characteristic parameters in a traditional GP model to obtain electrical characteristic parameters, consistent with online technical distribution, of the bipolar transistors by means of Monte Carlo simulation.

Description

technical field [0001] The invention relates to the field of simulation of semiconductor devices, in particular to a method for extracting parameters of bipolar transistors. Background technique [0002] During the production process of bipolar transistors, there will be some differences in their electrical characteristic parameters due to many reasons such as uneven distribution of process conditions, parasitic resistance, distribution of PN junction impurities, and small changes in device size. These differences will usually have a statistical distribution. Usually, the wafer foundry will provide circuit design customers with an angle model based on the range of factory process parameters in the bipolar transistor simulation model. The simulation of this angle model by the circuit designer can only obtain the extreme distribution of device electrical parameters in the actual process. Boundary conditions, but the true distribution of the actual electrical parameters cannot...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 王正楠
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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