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Memory, and detection circuit and detection method for electric fuse memory array

A storage array and detection circuit technology, which is applied in the field of memory and detection circuit of electric fuse storage array, can solve the problems of detection before programming of electric fuse storage array, low production yield of electric fuse storage array, etc., and achieve speed improvement , reduce the area, reduce the effect of complexity

Active Publication Date: 2015-07-01
SEMICON MFG INT (SHANGHAI) CORP
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AI Technical Summary

Problems solved by technology

[0007] The present invention solves the problem in the prior art that the electric fuse storage array cannot be detected before programming, resulting in a low production yield of the electric fuse storage array

Method used

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  • Memory, and detection circuit and detection method for electric fuse memory array
  • Memory, and detection circuit and detection method for electric fuse memory array
  • Memory, and detection circuit and detection method for electric fuse memory array

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Embodiment Construction

[0035] As described in the background art, a memory cell composed of an electric fuse can only be programmed once, and the electric fuse cannot be restored after it is blown. In the prior art, there is no effective detection circuit and method to detect it before programming, and it is only replaced in a redundant manner after an error is found after programming, and the production yield of the electric fuse memory array is low.

[0036] Because the electric fuse is stored in the array to judge whether the electric fuse is blown to know whether the data stored in the memory unit is 0 or 1: before the electric fuse is blown, the resistance value is very small, and the data is stored as 0; the electric fuse is blown Finally, the resistance value is very large, and the data 1 is stored. Moreover, the resistance difference of the electric fuse before and after being programmed is determined. Based on the above analysis, the technical solution of the present invention provides a d...

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Abstract

The invention discloses a memory, and a detection circuit and a detection method for an electric fuse memory array, wherein the electric fuse memory array comprises m-row and n-column memory units, and m and n are positive integers; each memory unit comprises a memory transistor and an electric fuse. The detection circuit comprises n detection units, wherein each detection unit comprises a switch transistor and a reference resistor; the gate of each switch transistor is used as a control end of each detection unit, the drain of the switch transistor is connected with one end of the reference resistor, and the source of the switch transistor is grounded; the other end of the reference resistor is correspondingly connected with the connection ends of the memory transistor and the electric fuse in the storage unit on the same column. According to the memory, and the detection circuit and the detection method for the electric fuse memory array provided by the technical scheme of the invention, the production yield of the electric fuse memory array is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory and a detection circuit and method of an electric fuse storage array. Background technique [0002] Electric fuse (E-fuse) technology is a technology developed according to the characteristics of polysilicon fuse. The initial resistance value of the electric fuse is very small. When a large current passes through the electric fuse, the electric fuse is blown and its resistance value doubles. A blown e-fuse remains permanently open, while an unblown e-fuse remains on. Therefore, the storage unit formed by the electric fuse can determine whether the electric fuse is blown to obtain the data stored inside it. [0003] figure 1 It is a structural schematic diagram of an existing memory. refer to figure 1 , the memory includes a row decoder 11, a column decoder 12, n sense amplifiers (SA1, SA2, SA3, . . . , SAn) and an electric fuse memory array. The electric fus...

Claims

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Application Information

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IPC IPC(8): G11C17/16G11C17/18
Inventor 黄正太杨家奇黄正乙
Owner SEMICON MFG INT (SHANGHAI) CORP
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